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Journal of ZheJiang University (Engineering Science)  2026, Vol. 60 Issue (10): 2077-2086    DOI: 10.3785/j.issn.1008-973X.2026.10.001
    
Technique for temperature equalization of upper and lower arms based on dead-time shifting adjustment
Yanyong YANG1(),Wuhua LI2,Pinjia ZHANG3
1. School of Mechanical and Electrical Engineering, China University of Mining and Technology-Beijing, Beijing 100083, China
2. College of Electrical Engineering, Zhejiang University, Hangzhou 310057, China
3. Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
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Abstract  

To address the issue of inconsistent thermal stress between the upper and lower devices of the same bridge arm in converters under conditions of uneven aging or layout deviations, a novel thermal balancing method for upper and lower bridge arms based on dead-time shifting adjustment was proposed. By monitoring the on-state voltage of insulated gate bipolar transistor (IGBT) online, the real-time junction temperature of IGBTs was deduced based on the mapping relationship between the on-state voltage and junction temperature of IGBTs. Then, the temperature difference between the upper and lower devices of the same bridge arm was determined. When the thermal stress difference between the upper and lower bridge arms exceeded the threshold, the effective conduction time of the upper and lower bridge arms was adjusted by fine-tuning the position of the dead time, thereby actively regulating the power loss distribution of the upper and lower bridge arms. This achieved an increase in the loss of the bridge arm with lower temperature and a decrease in the loss of the bridge arm with higher temperature without affecting the total system loss, thus improving the thermal stress consistency of power devices in the converter and enhancing system reliability. Theoretical analysis and experimental results showed that the proposed method did not affect system efficiency and had no significant negative impact on output performance. Under typical operating conditions, the average temperature difference between the upper and lower devices was reduced by approximately 14% after adjustment, effectively improving the thermal stress consistency of the upper and lower bridge arms.



Key wordsdead-time adjustment      converter      power device      temperature equalization      thermal management     
Received: 31 December 2025      Published: 28 July 2026
CLC:  TN 322.8  
  TM 46  
Fund:  国家自然科学基金资助项目(52477204, 52225702, 52437004,52207185);北京市自然科学基金资助项目(L247021,L257014);中国科学技术协会青年人才托举工程 (YESS20240412);新型电力系统运行与控制全国重点实验室资助课题(SKLD24KZ09);中央高校基本科研项目(2025XJJD02) .
Cite this article:

Yanyong YANG,Wuhua LI,Pinjia ZHANG. Technique for temperature equalization of upper and lower arms based on dead-time shifting adjustment. Journal of ZheJiang University (Engineering Science), 2026, 60(10): 2077-2086.

URL:

https://www.zjujournals.com/eng/10.3785/j.issn.1008-973X.2026.10.001     OR     https://www.zjujournals.com/eng/Y2026/V60/I10/2077


基于死区移位调整的上下桥臂热均衡方法

变换器在老化不均或者布局偏差的情况下,容易出现同一桥臂上管与下管热应力不一致的问题,为此提出基于死区移位调整的上、下桥臂热均衡新方法. 在线监测绝缘栅双极型晶体管(IGBT)导通电压,基于IGBT导通电压与结温之间的映射关系推算IGBT的实时结温,并判断同一桥臂上下管的温度差异. 当上下桥臂热应力差异超过阈值时,通过微调死区的位置来调节上桥臂和下桥臂的有效导通时间,主动调控上下桥臂的功率损耗分布,从而在不影响系统总损耗的情况下,使温度较低的桥臂损耗增加,温度较高的桥臂损耗减少,从而提高变换器中功率器件热应力一致性,提升系统可靠性. 理论分析和实验结果表明,所提方法不会影响系统效率,对输出性能也没有显著负面影响. 在典型工况下,调整后上管与下管之间的平均温度差降低了约14%,有效提升了上下桥臂热应力一致性.


关键词: 死区时间调整,  变换器,  功率器件,  温度均衡,  热管理 
Fig.1 Gate drive principle and structure of IGBT half-bridge
情形上管下管死区移位上下管损耗情况
1关断开通延后$ {E}_{\mathrm{U}}> {E}_{\mathrm{L}} $
2开通关断提前$ {E}_{\mathrm{U}}> {E}_{\mathrm{L}} $
3关断开通提前$ {E}_{\mathrm{U}}< {E}_{\mathrm{L}} $
4开通关断延后$ {E}_{\mathrm{U}}< {E}_{\mathrm{L}} $
Tab.1 Strategy of dead-time shifting adjustment
Fig.2 Gate drive before and after dead-time shifting with case 3 and case 4 as examples
Fig.3 Schematic diagram of single-phase inverter used to simulate situation where thermal resistances of upper and lower bridge arms are inconsistent
设备或者器件型号
IGBTIKW30N60T
IGBT的栅极驱动芯片1ED020I12-F
负载功率电阻/Ω10
高压直流电源IT6723G
低压直流电源(辅助电源)IT6322A
示波器HDO4804
Tab.2 Main components and instruments used in experimental platform
Fig.4 Experimental platform for verifying thermal management method
Fig.5 Observed infrared thermal image
Fig.6 Control method for dead-time shifting adjustment
是否采取热管理$ {\mu }_{\mathrm{o}\_ \mathrm{U}} $/%$ {P}_{\mathrm{o}\_ \mathrm{U}} $/W$ {\mu }_{\mathrm{o}\_ \mathrm{L}} $/%$ {P}_{\mathrm{o}\_ \mathrm{L}} $/W
热管理前49.51.8249.51.82
热管理后51.51.8947.51.75
Tab.3 Conduction time and conduction loss power of upper and lower arm before and after thermal management
Fig.7 Temperature of G2 and G4 during operation
Fig.8 Changes in temperature over time before and after implementing thermal management strategy
Fig.9 Temperature difference between upper and lower IGBTs of half-bridge over time
Fig.10 Waveforms without adopting thermal management strategies
Fig.11 Waveforms with dead-time shifting adjustment
Fig.12 FFT results of output voltage spectral characteristics before and after adopting thermal management strategy
Fig.13 Local enlarged graph near 50 Hz of output voltage spectrum characteristic FFT
Fig.14 Local enlarged graph near 10 kHz of output voltage spectrum characteristic FFT
Fig.15 Schematic diagram of temperature monitoring circuit for upper and lower arms of a half-bridge
Fig.16 Half-bridge arm circuit board for temperature monitoring with on-state voltage drop measurement
Fig.17 Actual temperature of bridge arm and monitoring waveform of conduction voltage
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