Enhanced PdSe2/Si heterojunction photodetector by Al2O3 layer

doi:10.3785/j.issn.1008-973X.2023.01.019

Journal of ZheJiang University (Engineering Science)

2023, Vol. 57

Issue (1): 190-199 DOI: 10.3785/j.issn.1008-973X.2023.01.019

Enhanced PdSe₂/Si heterojunction photodetector by Al₂O₃ layer

Yi-fei HE1(

),De-ren YANG1,2,Xiao-dong PI1,2,*(

)

1. School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2. Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China

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Abstract

PdSe₂/Al₂O₃/Si heterojunction device was fabricated by inserting Al₂O₃ tunneling layer grown by atomic layer deposition (ALD) in order to decrease the dark current. A fast and broadband photodetector was realized by optimizing the thickness of Al₂O₃. Results showed that the dark current of PdSe₂/Al₂O₃/Si device was reduced by about 3 orders of magnitude compared with the device without Al₂O₃ layer under 808 nm illumination and ?2 V bias voltage. The photoresponsivity of the device was about 0.31 A/W and the corresponding specific detectivity was about 2.5×10 ¹² Jones. The device exhibited obvious self-driving effect without bias. The device still maintained a better photoresponse after 1 200 cycles of cyclic testing. The rise time and fall time of photoresponse were 7.1 μs and 15.6 μs, respectively. The introduction of Al₂O₃ tunneling layer between the two-dimensional layered semiconductor material and silicon can effectively reduce the dark current of the device and is beneficial to achieving high-performance silicon-based photodetectors.

Key words： silicon palladium diselenide heterojunction atomic layer deposition (ALD) fast photoresponse tunneling photodetector

Received: 08 April 2022 Published: 17 January 2023

CLC:

TN 215

Fund: 国家重点研发计划资助项目（2017YFA0205700，2018YFB2200101）

Corresponding Authors: Xiao-dong PI E-mail: yf_h@zju.edu.cn;xdpi@zju.edu.cn

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Cite this article:

Yi-fei HE,De-ren YANG,Xiao-dong PI. Enhanced PdSe₂/Si heterojunction photodetector by Al₂O₃ layer. Journal of ZheJiang University (Engineering Science), 2023, 57(1): 190-199.

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https://www.zjujournals.com/eng/10.3785/j.issn.1008-973X.2023.01.019 OR https://www.zjujournals.com/eng/Y2023/V57/I1/190

氧化铝增强的PdSe₂/Si异质结光电探测器

为了降低暗电流，通过原子层沉积(ALD)生长了一层氧化铝（Al₂O₃）隧穿层，制备了PdSe₂/Al₂O₃/Si异质结光电探测器. 通过优化Al₂O₃层的厚度，使得该探测器实现了高速和宽光谱响应. 研究结果表明，在波长为808 nm的光照射和?2 V偏压下，所制备的光电探测器与未生长Al₂O₃的器件相比，暗电流降低了约3个数量级，器件的光响应度达到了约为0.31 A/W，对应的比探测率约为2.5×10¹² Jones，器件在零偏压下表现出明显的自驱动效应. 经过循环测试1 200次后，器件保持良好的光响应. 器件响应的上升时间和下降时间分别为7.1和15.6 μs. 结果表明，在二维层状半导体材料与Si之间引入Al₂O₃隧穿层，可以有效地降低器件的暗电流，有利于高性能的Si基光电探测器的制备.

关键词： 硅, 二硒化钯, 异质结, 原子层沉积(ALD), 快速光响应, 隧穿光电探测器

Fig.1 Schematic diagram of PdSe₂/Al₂O₃/Si heterojunction device

Fig.2 XPS spectra of Al₂O₃ films grown by ALD

Fig.3 Characterization of PdSe₂ film

Fig.4 Cross-section view TEM image of PdSe₂/Al₂O₃/Si

Fig.5 Comparison of PdSe₂/Al₂O₃/Si and PdSe₂/Si heterojunction device without illumination and under 808 nm illumination

Fig.6 ln I-V curve of PdSe₂/Al₂O₃/Si device

Fig.7 1/C²-V curve of PdSe₂/Al₂O₃/Si device

Fig.8 Relationship of responsivity and light intensity of PdSe₂/Al₂O₃/Si heterojunction device

Fig.9 Photoresponse of PdSe₂/Al₂O₃/Si and PdSe₂/Si heterojunction devices

Fig.10 Response time of PdSe₂/Al₂O₃/Si and PdSe₂/Si heterojunction device

Fig.11 Stability of PdSe₂/Al₂O₃/Si heterojunction with 1200 cycles at −2 V bias voltage

Fig.12 Self-driven effect of PdSe₂/Al₂O₃/Si heterojunction device

Fig.13 Performance of PdSe₂/Al₂O₃/Si heterojunction device under 375~1 342 nm illumination

Fig.14 Performance of PdSe₂/Al₂O₃/Si heterojunction device under 1342 nm illumination

Fig.15 Band diagram of PdSe₂/Al₂O₃/Si heterojunction device

Tab.1 Comparison of key parameters of our device with other reported photodetectors based on two dimensional materials devices


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