[1] DI SARRO J P, ROSENBAUM E. A Scalable SCR compact model for ESD circuit simulation[J]. IEEE Transactions on Electron Devices, 2010, 57(12): 3275-3286.
[2] HUANG C Y, CHIU F C, CHEN Q K, et al. An SCR-Incorporated BJT device for robust ESD protection with high latch up immunity in high-voltage technology [J]. IEEE Transactions on Device and Materials Reliability, 2012, 12(1): 113-123.
[3] WANG A Z H, TSAY C H. On a dual-polarity on-chip electrostatic discharge protection structure[J]. IEEE Transctions on Electron Devices, 2001, 48(5): 978-984.
[4] LIU Z W, VISNSON J, LOU LF, et al. An improved bidirectional SCR structure for low trigger ESD protection applications[J]. IEEE Electron Devices Letters, 2008, 29(4): 360-362.
[5] BART K, MARKUS P J M, Cong S T, et al. ESD protection solutions for high voltage technologies [J]. Microelectronics Reliability, 2006, 46(5): 677-688.
[6] MARKUS P J M, CHRISTIAN C R, KOEN G V, et al. High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation [J]. Microelectronics Reliability, 2003, 43(7): 993-1000.
[7] DONG S R, HAO J, MIAO M, et al. Novel capacitance coupling complementary dual-direction SCR for hign-voltage ESD [J]. IEEE Electron Device Letters, 2012, 33(5): 640-642.
[8] DONG S R, WU J, MIAO M, et al. High-holding-voltage silicon-controlled rectifier for ESD applications [J]. IEEE Electron Device Letters, 2012, 33(10): 1345-1347.
[9] KER M D, HSIAO Y W . Low capacitance ESD protection design for high-speed I/O interfaces in 130-nm CMOS process [J].Microelectronics Reliability, 2009, 49(6): 650-659.
[10] 朱科翰, 董树荣, 韩雁, 等. 不同栅压下NMOS器件的静电防护性能[J]. 浙江大学学报:工学版, 2010, 44(1): 142144.
ZHU Ke-han, DONG Shu-rong, HAN Yan, et al. ESD protection of NMOS device at different gate bias[J]. Journal of Zhejiang University: Engineering Science, 2010, 44(1): 142-144.
[11] HAN Y, SONG B, DONG S R, et al. Study of current saturation behaviors in dual direction SCR for ESD applications[J]. Microelectronics Reliability, 2011, 51(2): 332-336.
[12] CUI Q, HAN Y, DONG S R, et al. A Robust polysilicon-assisted SCR in ESD protection application[J]. Journal of Zhejiang University: Science A, 2007, 8(12): 1879-1883.
[13] KOO Y, LEE K, KIM K, et al. Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology[J]. Microelectronics Journal, 2009, 40(6): 1007-1012.
[14] TSAI M H, HSU S S H , HSUEH F L, et al. A 24-GHz low-noise amplifier using RF junction varactors for noise optimization and CDM ESD protection in 90 nm CMOS [J]. IEEE Microwave and Wireless Components Letters, 2011, 21(7): 374-376. |