Heat transfer performance and scale effect of hot spots in embedded microchannel cooling system

doi:10.3785/j.issn.1008-973X.2021.04.008

Journal of ZheJiang University (Engineering Science)

2021, Vol. 55

Issue (4): 665-674 DOI: 10.3785/j.issn.1008-973X.2021.04.008

Heat transfer performance and scale effect of hot spots in embedded microchannel cooling system

Yun-long QIU(

),Wen-jie HU,Chang-ju WU*(

),Wei-fang CHEN

School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China

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Abstract

An experimental and theoretical study was presented to analyze the heat transfer performance and the scale effect of hot spots in embedded microchannel liquid cooling system. MEMS micromachining was used to fabricate the test chip, silicon-to-silicon direct bonding was used to bond the microchannel layer to the silicon cover, and Flip-chip bonding was used to bond the test chip to a printed circuit board. Results show that the embedded-microchannel design greatly reduces the thermal conduction distance from the microchip to the microchannel, resulting in a low thermal resistance from the microchip to environment. The test results show that the temperature rise of the simulated IC under a uniform heat flux of 100 W/cm² can be controlled within 40 K using only 6.84 mW/cm² of pumping power with a coefficient of performance exceeding 14 000. The existence of hot spots increases the proportion of the heat conduction resistance in the total thermal resistance of the hot spot area under a non-uniform heat flux. The smaller the size of the hot spot area was, the more serious the lateral heat conduction was and the thermal conduction resistance became larger, which indirectly reduced the proportion of the heat convection resistance in the total thermal resistance of the hot spot area. Then the benefit of increasing the convective heat transfer coefficient on decreasing the total thermal resistance of the hot spot area was decreased.

Key words： chip cooling microchannel MEMS hot spot thermal resistance heat convection

Received: 15 September 2020 Published: 07 May 2021

CLC:

TN 30

Fund: 国家自然科学基金资助项目（51575487）；国家自然科学基金重大科研仪器研制项目（6162790014）

Corresponding Authors: Chang-ju WU E-mail: qyl1992@zju.edu.cn;wuchangju@zju.edu.cn

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Cite this article:

Yun-long QIU,Wen-jie HU,Chang-ju WU,Wei-fang CHEN. Heat transfer performance and scale effect of hot spots in embedded microchannel cooling system. Journal of ZheJiang University (Engineering Science), 2021, 55(4): 665-674.

URL:

http://www.zjujournals.com/eng/10.3785/j.issn.1008-973X.2021.04.008 OR http://www.zjujournals.com/eng/Y2021/V55/I4/665

嵌入式微通道传热特性及局部热点尺度效应

通过实验测试结合理论分析，研究嵌入式微通道冷却系统的传热特性及局部热点的尺度效应. 测试芯片加工采用MEMS工艺，微通道层与顶层之间的连接采用硅硅直接键合，芯片与电路板（PCB）之间的连接采用倒装焊接. 研究结果表明，采用嵌入式微通道设计极大地缩短了微芯片到微通道的导热距离，可以显著地减小微芯片到环境的热阻. 根据测试结果可知，在100 W/cm²均匀热流密度的条件下，使用6.84 mW/cm²的泵功，可以将模拟IC热源的温升控制到小于40 K，能效比超过14 000. 在非均匀热流密度的条件下，局部热点的存在会增大导热热阻在总热阻中的占比，局部热点尺度越小，热点附近的侧向热传导越严重，导热热阻越大，这减小了对流换热热阻在热点区域总热阻中的占比，使得增大对流换热系数带来的总热阻降低效果减弱.

关键词： 芯片冷却, 微通道, MEMS, 局部热点, 热阻, 对流换热

Fig.1 Schematic diagram and photo of experimental setup

Fig.2 Structure of thin-film Ti/Pt resistance

Fig.3 Fabrication process of test chip

Fig.4 SEM photos of microchannel array

Tab.1 Experimental uncertainties of measurements

Fig.5 Variations of thermal resistance components and their proportion in total IC-ambient thermal resistance with flow rate

Fig.6 Effect of large-scale hot spot on temperature rise of simulated IC at q_V = 60 mL/min

Fig.7 Effect of large-scale hot spot on thermal resistance of microchannel heat sink at q_V = 60 mL/min

Fig.8 Simplified thermal resistance model for hot spot area

Fig.9 Effect of heat flux increase in SHS area on temperature rise of S₁ to S₇ of No.1 chip at q_V = 60 mL/min

Fig.10 Effect of background heat flux on SHS temperature rise of No.1 chip at q_V = 60 mL/min

Fig.11 Effect of relative location between SHS and microchannel on SHS temperature rise with background heat flux of 50 W/cm² and SHS heat flux of 870 W/cm²

Fig.12 Effect of flow rate on LHS temperature rise with background heat flux of 50 W/cm² and LHS heat flux of 100 W/cm²

Fig.13 Effect of flow rate on SHS temperature rise of No.1 chip with background heat flux of 50 W/cm² and SHS heat flux of 870 W/cm²


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