电气工程 |
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共栅共源结构GaN HEMT开关模型 |
马皓,张宁,林燎源 |
浙江大学 电气工程学院,浙江 杭州 310027 |
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Switching model of GaN HEMT in cascode configuration |
MA Hao, ZHANG Ning, LIN Liao yuan |
College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China |
[1] 付文丽. GaN HEMT功率器件新结构和模型研究[D]. 成都: 电子科技大学, 2013: 79.
FU Wen li. GAN HEMT power device new structure and modeling research [D]. Chengdu: University of Electronic Science and Technology of China, 2013: 79.
[2] MILLAN J, GODIGNON P, PERPINA X, et al. A survey of wide bandgap power semiconductor devices [J]. IEEE Transactions on Power Electronics, 2014, 29(5): 21552163.
[3] 钱照明,张军明,盛况. 电力电子器件及其应用的现状和发展[J]. 中国电机工程学报, 2014, 34(29): 51495161.
QIAN Zhao ming, ZHANG Jun ming, SHENG Kuang. Status and development of power semiconductor devices and its applications [J]. Proceedings of the CSEE, 2014, 34(29): 51495161.
[4] MITOVA R, GHOSH R, MHASKAR U, et al. Investigations of 600 V GaN HEMT and GaN diode for power converter applications [J]. IEEE Transactions on Power Electronics, 2014, 29(5): 24412452.
[5] ZHANG X, YAO C, LI C, et al. A wide bandgap device based isolated quasi switched capacitor DC/DC converter [J]. IEEE Transactions on Power Electronics, 2014, 29(5): 25002510.
[6] 马焕,王康平,杨旭,等. GaN器件的LLC谐振变换器的优化设计[J]. 电源学报, 2015, 13(1): 2127.
MA Huan, WANG Kang ping, YANG Xu, et al. Optimal design of GaN based LLC resonant converter [J]. Journal of Power Supply, 2015, 13(1): 2127.
[7] 张雅静. 面向光伏逆变系统的氮化镓功率器件应用研究[D]. 北京: 北京交通大学, 2015: 2933.
ZHANG Ya jing. Research and application of the GaN power device for photovoltaic inverter system[D]. Beijing: Beijing Jiaotong University, 2015: 2933.
[8] 胡光铖,陈敏,陈烨楠,等. 基于SiC MOSFET户用光伏逆变器的效率分析[J]. 电源学报, 2014(6): 5358, 92.
HU Guang cheng, CHEN Min, CHEN Ye nan, et al. Efficiency analysis of household PV inverter based on SiC MOSFET [J]. Journal of Power Supply, 2014(6): 5358, 92.
[9] 孙运杰,傅鸿雅,王森,等. 一种高频自冷的全数字控制有源电力滤波器[J]. 电源学报, 2015, 13(5): 7377.
SUN Yun jie, FU Hong ya, WANG Sen, et al. Digital controlled active power filter with characteristic of high frequency and self cooling [J]. Journal of Power Supply, 2015, 13(5): 7377.
[10] CHOWDHURY S, AND MISHRA U K. Lateral and vertical transistors using the AlGaN/GaN heterostructure [J]. IEEE Transactions on Electron Devices, 2013, 60(10): 30603066.
[11] ZHANG Z, EBERLE W, YANG Z, et al. Optimal design of resonant gate driver for buck converter based on a new analytical loss model [J]. IEEE Transactions on Power Electronics, 2008, 23(2): 653666.
[12] EBERLE W, ZHANG Z, LIU Y, et al. A practical switching loss model for buck voltage regulators [J]. IEEE Transactions on Power Electronics, 2009, 24(3): 700713.
[13] WANG J, LI R T, CHUNG H S. An investigation into the effects of the gate drive resistance on the losses of the MOSFET snubber diode configuration [J]. IEEE Transactions on Power Electronics, 2012, 27(5): 26572672.
[14] AGGELER D, BIELA J, KOLAR J W. Controllable dv/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications [C] ∥ 2010 Twenty Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC). Palm Springs: IEEE, 2010:15841590.
[15] ALONSO A R, DIAZ M F, LAMAR D G, et al. Switching performance comparison of the SiC JFET and SiC JFET/Si MOSFET cascode configuration [J]. IEEE Transactions on Power Electronics, 2014, 29(5): 24282440.
[16] HUANG X, LI Q, LIU Z, LEE F C. Analytical loss model of high voltage GaN HEMT in cascode configuration [J]. IEEE Transactions on Power Electronics, 2014, 29(5): 22082219.
[17] REN Y, XU M, ZHOU J, LEE F C. Analytical loss model of power MOSFET [J]. IEEE Transactions on Power Electronics, 2006, 21(2): 310319.
[18] 邓夷,赵争鸣,袁立强,等. 适用于复杂电路分析的IGBT模型[J]. 中国电机工程学报, 2010, 30(9): 17.
DENG Yi, ZHAO Zheng ming, YUAN Li qiang, et al. IGBT model for analysis of complicated circuits [J]. Proceedings of the CSEE, 2010, 30(9): 17.
[19] 李艳,张雅静,黄波,等. Cascode型GaN HEMT输出伏安特性及其在单相逆变器中的应用研究[J]. 电工技术学报, 2015, 30(14): 295303.
LI Yan, ZHANG Ya jing, HUANG Bo, et al. Research on output volt ampere characteristics of cascode GaN HEMT and its application in single phase inverter [J]. Transaction of China Electrotechnical Society, 2015, 30(14): 295303.
[20] CHEN Z. Characterization and modeling of high switching speed behavior of SiC active devices [D] .Virginia Polytechnic Institute and State University, 2009: 125137.
[21] TPH3006PS datasheet [Z]. Transphorm, 2014.
[22] RODRIGUEZ M, RODRIGUEZ A, MIAJA P F, et al. An insight into the switching process of power MOSFETs: an improved analytical losses model [J]. IEEE Transactions on Power Electronics, 2010, 25(6): 16261640.
[23] LINDER S. Power semiconductors [M]. Taylor and Francis, 2006.
[24] BENDA V, GOWAR J, GRANT D A. Discrete and integrated power semiconductor devices: theory and applications [M]. John Wiley and Sons, 1999.
[25] MOHAN N, UNDELAND T M. Power electronics: converters, applications, and design [M]. John Wiley and Sons, 2007. |
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