| Telecommunication Technolgy |
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| Effection of morphology of SiC/SiO2 interface on mobility characteristics of MOS devices |
| LIU Li, YANG Yin tang |
| Microelectronics Institute,Xi Dian University,Xi’an Shaanxi 710071 China |
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Abstract To investigate the effects of SiC/SiO2 interface roughness on the mobility of 4H SiC MOS capacitors and MOSFETs, carbon cap protection to the surface of SiC was used to reduce the surface roughness during high temperature annealing after ion implantation. Carbon cap is formed by annealing photo resistant for 30min. It is shown that because micro scale lateral surface roughness (peak to peak/valley to valley) does not affect the movement of channel electrons with nm scale mean free path in the SiC MOS channel, so in the duration of the high temperature annealing regardless of where there is carbon cap existence or not and surface roughness is changed or not, the Dit measured from NMOS capacitors are almost identical and channel mobility in the MOSFET do not been changed ultimately.
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Published: 01 February 2016
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SiC/SiO2界面形貌对SiC MOS器件沟道迁移率的影响
为了研究SiC/SiO2界面粗糙度对SiC MOS器件构道迁移率的影响,在离子注入后高温退火过程中采用碳膜保护SiC表面以减小退火过程中产生的表面粗糙度,碳膜的形成通过对光刻胶在600 ℃下前烘30 min实现.研究结果表明：微结构分析所得的微米量级的横向表面粗糙度（峰对峰,谷对谷）不会影响电子平均自由程为纳米数量级的沟道电子在SiC MOS器件沟道中的迁移运动,在高温退火过程中,碳膜的是否存在对表面粗糙度和NMOS电容SiC/SiO2界面态密度没有影响,而且NMOSFET器件的场效应迁移率没有发生太大的变化.
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| ［1］ ZHOU Wei cheng, ZHONG Xue qian, SHENG Kuang. High temperature stability and the performance degradation of SiC MOSFET ［J］. IEEE Transaction On Power Electronics, 2014, 29(5): 2329-2337.
［2］ FIORENZA P, SWANSON L K, VIVONA M. Comparative study of gate oxide in 4H SiC lateral MOSFETs subjected to post deposition annealing in N2O and POCl3［J］. Applied Physics A: Material Science. and Processing,2013: 1-7.
［3］ ROCCAFORTER F, FIORENZA P, GIANNAZZO F. Impact of the morphological and electrical properties of SiO2/4H SiC interfaces on the behavior of 4H SiC MOSFET［J］.ECS Journal of Solid State Science and Technology, 2013, 2(8): N3006-N3011.
［4］ FIORENZA P, GIANNAZZO F, SWANSON L. A look underneath the SiO2/4H SiC interface after N2O thermal treatments［J］. Beilstein Journal of Nanotechnology,2013, 4: 249-254.
［5］ NAIK H K. TANG T P. Chow, Effect of Graphite cap for implant activation on inversion channel mobility in 4H SiC mosfet［J］. Material Science Forum, 2009: 615617: 773-776.
［6］ KHANNA V K. Physics of carrier transport mechanisms and ultra small scale phenomena for theoretical modeling of nanometer MOS transistors from diffusive to ballistic regimes of operation［J］, Physics Reports, 2004: 398, 67.
［7］ LIU LI, YANG YIN TANG, MA XIAO HUA. The electrical characteristics of a 4H silicon carbide metal insulator semiconductor structure with Al2O3 as the gate dielectric［J］.Chinese Physics B, 2011,20 (12): 1272048.
［8］ LIU GANG, XU YI, XU CAN. Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery［J］. Applied Surface Science, 2015, 324: 30-34.
［9］ DHAR S, HANEY S, CHENG L. Inversion layer carrier concentration and mobility in 4H SiC metal oxide semiconductor field effect transistors ［J］. Journal of Applied Physics: 2007: 556-557: 835. |
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