信息工程、电子工程 |
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2.4 GHz GaAs HBT高线性度功率放大器设计 |
张松( ),傅海鹏*( ) |
天津大学 微电子学院,天津 300072 |
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Design of 2.4 GHz GaAs HBT high linearity power amplifier |
Song ZHANG( ),Haipeng FU*( ) |
School of Microelectronics, Tianjin University, Tianjin 300072, China |
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YANG H, YOU H, QIAO S A fully integrated GaAs HBT power amplifier with enhanced efficiency for 5-GHz WLAN applications[J]. IEICE Electronics Express, 2022, 19 (12): 20220157
doi: 10.1587/elex.19.20220157
|
2 |
LIU B, YI X, YANG K, et al A carrier aggregation transmitter front end for 5-GHz WLAN 802.11ax application in 40-nm CMOS[J]. IEEE Transactions on Microwave Theory and Techniques, 2020, 68 (1): 264- 276
doi: 10.1109/TMTT.2019.2939311
|
3 |
JU I, GONG Y, CRESSLER J D Highly linear high-power 802.11ac/ax WLAN SiGe HBT power amplifiers with a compact 2nd-harmonic-shorted four-way transformer and a thermally compensating dynamic bias circuit[J]. IEEE Journal of Solid-State Circuits, 2020, 55 (9): 2356- 2370
doi: 10.1109/JSSC.2020.2993720
|
4 |
REYNIER P, SERHAN A, PARAT D, et al. A High-power SOI-CMOS PA module with fan-out wafer-level packaging for 2.4 GHz Wi-Fi 6 applications [C]// 2021 IEEE Radio Frequency Integrated Circuits Symposium . Atlanta: IEEE, 2021: 59–62.
|
5 |
BEN-BASSAT A, GROSS S, LANE A, et al A fully integrated 27-dBm dual-band all-digital polar transmitter supporting 160 MHz for Wi-Fi 6 applications[J]. IEEE Journal of Solid-State Circuits, 2020, 55 (12): 3414- 3425
doi: 10.1109/JSSC.2020.3024973
|
6 |
PASSAMANI A, PONTON D, WOLTER A, et al. A 28 nm low-voltage digital power-amplifier for QAM-256 WIFI applications in 0.5 mm2 area w/ 2D digital-pre-distortion and package combiner [C]// 2018 25th IEEE International Conference on Electronics, Circuits and Systems . Bordeaux: IEEE, 2018: 21–24.
|
7 |
NOH Y S, PARK C S PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit[J]. IEEE Journal of Solid-State Circuits, 2002, 37 (9): 1096- 1099
|
8 |
HUANG C C, CHEN W T, CHEN K Y High efficiency linear power amplifier for IEEE 802.11g WLAN applications[J]. IEEE Microwave and Wireless Components Letters, 2006, 16 (9): 508- 510
doi: 10.1109/LMWC.2006.880702
|
9 |
金婕, 艾宝丽, 史佳, 等 用于IEEE 802.11 b/g/n WLAN的高线性度功率放大器[J]. 半导体技术, 2015, 40 (4): 255- 260 JIN Jie, AI Baoli, SHI Jia, et al High linear power amplifier for IEEE 802.11 b/g/n WLAN applications[J]. Semiconductor Technology, 2015, 40 (4): 255- 260
|
10 |
SPIRITO M, DEVREEDE L C N, NANVER L K, et al Power amplifier PAE and ruggedness optimization by second-harmonic control[J]. IEEE Journal of Solid-State Circuits, 2003, 38 (9): 1575- 1583
doi: 10.1109/JSSC.2003.815918
|
11 |
XIE H, CHENG Y J, DING Y R, et al A C-band high-efficiency power amplifier MMIC with second-harmonic control in 0.25 μm GaN HEMT technology[J]. IEEE Microwave and Wireless Components Letters, 2021, 31 (12): 1303- 1306
doi: 10.1109/LMWC.2021.3106196
|
12 |
KIM J, HONG S K, OH J Highly efficient power amplifier based on harmonic-controlled matching network[J]. IEEE Microwave and Wireless Technology Letters, 2023, 33 (1): 43- 46
doi: 10.1109/LMWC.2022.3196669
|
13 |
FRANÇOIS B, REYNAERT P A fully integrated transformer-coupled power detector with 5 GHz RF PA for WLAN 802.11ac in 40 nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2015, 50 (5): 1237- 1250
doi: 10.1109/JSSC.2015.2399458
|
14 |
KANG S, BAEK D, HONG S A 5-GHz WLAN RF CMOS power amplifier with a parallel-cascoded configuration and an active feedback linearizer[J]. IEEE Transactions on Microwave Theory and Techniques, 2017, 65 (9): 3230- 3244
doi: 10.1109/TMTT.2017.2691766
|
15 |
CHOI K, KIM M, KIM H, et al A highly linear two-stage amplifier integrated circuit using InGaP/GaAs HBT[J]. IEEE Journal of Solid-State Circuits, 2010, 45 (10): 2038- 2043
doi: 10.1109/JSSC.2010.2061612
|
16 |
LI W T, WANG S M, LIN G C. A WLAN RF CMOS power amplifier with power detector, high harmonic suppression, and temperature compensation [C]// 2015 European Microwave Conference . Paris: IEEE, 2015: 1287–1290.
|
17 |
LI J J, ZHANG Z, ZHANG G A 5.15–6.425 GHz stagger-tuning neutralized power amplifier using a continuous-mode harmonically tuned network[J]. IEEE Microwave and Wireless Technology Letters, 2023, 33 (2): 173- 176
doi: 10.1109/LMWC.2022.3168567
|
18 |
GUO T, LU Z, TANG K, et al A floating-body transistor-based power amplifier for sub-6-GHz 5G applications in SOI CMOS 130-nm process[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, 69 (10): 4088- 4092
|
19 |
李皓天. 应用于功放小型化的金丝键合线模型研究[D]. 成都: 电子科技大学, 2021. LI Haotian. Research of gold bonding wire model for power amplifier miniaturization [D]. Chengdu: University of Electronic Science and Technology of China, 2021.
|
20 |
ADLERSTEIN M G Thermal stability of emitter ballasted HBT’s[J]. IEEE Transactions on Electron Devices, 1998, 45 (8): 1653- 1655
doi: 10.1109/16.704359
|
21 |
LIU W, KHATIBZADEH A, SWEDER J, et al The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors[J]. IEEE Transactions on Electron Devices, 1996, 43 (2): 245- 251
doi: 10.1109/16.481724
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