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浙江大学学报(工学版)  2024, Vol. 58 Issue (7): 1516-1523    DOI: 10.3785/j.issn.1008-973X.2024.07.021
信息工程、电子工程     
基于28 nm RRAM的可重构真随机数发生器
宋长坤(),郑彩萍,陈铖颖*()
厦门理工学院 光电与通信工程学院,福建 厦门 361024
28 nm RRAM-based reconfigurable true random number generator
Changkun SONG(),Caiping ZHENG,Chengying CHEN*()
School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
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摘要:

基于阻变存储器(RRAM)电流饥饿型环形振荡器的真随机数发生器(TRNG)方案,提出交替读写的操作模式,优化熵源重构机制. 针对现有RRAM在多操作周期下跨导线性化问题,提出熵可配置电阻窗口钳位电路. 通过减小电阻窗口获得RRAM非线性的最大化,所提电路能够有效避免RRAM出现过度置位、过度复位的现象,保证熵源稳定性. 基于UMC 28 nm HKMG工艺对TRNG进行流片. 输出数据统计性测试结果通过了NIST SP800-22所有测试集的真随机数标准测试. 检测结果表明,在高斯分布的95%置信区间,所有统计数据的自相关函数值均落在?0.003~0.003,输出序列具有良好的随机性.

关键词: 阻变存储器(RRAM)真随机数发生器(TRNG)熵源电流饥饿型环形振荡器跨导线性    
Abstract:

An alternating read and write mode was proposed based on the current-starved ring oscillator (CSRO) true random number generator (TRNG) with resistance random access memory (RRAM), and the entropy source reconstruction scheme was optimized. An entropy configurable resistance window clamping circuit (ECRWCC) was proposed to address the trans conductor linearization issues of RRAM under multiple operating cycles. By reducing the resistance window to maximize the nonlinearity of RRAM, the phenomenon of over-set and over-reset was effectively avoided in ECRWCC, and the stability of the entropy source was ensured. The TRNG was tapeout with a UMC 28 nm HKMG process. The statistical test results of the output data passed the true random number standard test for all test sets of NIST SP800-22. The results showed that within the 95% confidence interval of the Gaussian distribution, the autocorrelation function, of all statistics were in the range of ?0.003 and 0.003, and the output sequence had good randomness.

Key words: resistive random access memory (RRAM)    true random number generator (TRNG)    entropy source    current-starved ring oscillator    translinear
收稿日期: 2023-06-03 出版日期: 2024-07-01
CLC:  TN 453  
基金资助: 福建省自然科学基金引导性项目(2023H0052);厦门市重大科技项目(3502Z20221022).
通讯作者: 陈铖颖     E-mail: 2017000002@xmut.edu.cn;chenchengying@xmut.edu.cn
作者简介: 宋长坤(1998—),男,硕士生,从事高精度混合信号集成电路设计和研究. orcid.org/0000-0001-1998-2704. E-mail:2017000002@xmut.edu.cn
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引用本文:

宋长坤,郑彩萍,陈铖颖. 基于28 nm RRAM的可重构真随机数发生器[J]. 浙江大学学报(工学版), 2024, 58(7): 1516-1523.

Changkun SONG,Caiping ZHENG,Chengying CHEN. 28 nm RRAM-based reconfigurable true random number generator. Journal of ZheJiang University (Engineering Science), 2024, 58(7): 1516-1523.

链接本文:

https://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2024.07.021        https://www.zjujournals.com/eng/CN/Y2024/V58/I7/1516

图 1  RRAM器件结构图
图 2  可重构RRAM真随机数发生器电路结构
图 3  RRAM传输门逻辑阵列图
图 4  基于H桥结构的RRAM单元重构电路
图 5  基于H桥结构的具有电阻窗口钳位作用的RRAM熵源重构电路
图 6  HfO2基RRAM置位和复位时间与偏置电压关系
图 7  轨到轨共模输入范围的比较器
图 8  电压-电流转换电路与电流饥饿型环形振荡器结合的完整电路
图 9  电流饥饿型环形振荡器的输出频率分布
图 10  电流饥饿型环形振荡器的相位噪声
图 11  熵源后处理电路
图 12  RRAM 真随机数发生器的测试单元
图 13  真随机数发生器晶圆及测试平台
图 14  后处理电路输入与输出的时域波形
图 15  熵源后处理前、后的输出位图
图 16  输出结果的自相关特性
检测项P-Value通过率检测结果
频数0.678 68697/100通过
块内频数0.474 986100/100通过
累加和0.955 83597/100通过
游程0.474 986100/100通过
最长游程0.759 75698/100通过
二元矩阵秩0.137 282100/100通过
离散傅里叶变换0.137 28297/100通过
重叠模块匹配0.699 31398/100通过
非重叠模块匹配0.711 41397/100通过
通用统计0.550 48599/100通过
线性复杂度0.955 83599/100通过
序列0.384 19998/100通过
近似熵0.719 74797/100通过
随即游动0.534 14662/63通过
随即游动频数0.733 91863/63通过
表 1  NIST测试结果汇总表
真随机数发生器熵源NRRAMNIST结果熵源保护机制f /kHzP/μW
Zhang等[4]RRAM内部和器件间变化1×2阵列12/15500
Yang等[6]RRAM器件间的复位变化19/914840
Cambou等[7]RRAM器件间变化2 Mbit阵列10/101 000.00
Postel-Pellerin等[12]RRAM开关概率7×7阵列11/15256
Balatti等[15]RRAM传输延迟单个器件9/150.1675
Huang等[16]RRAM内的RTN15/15
本研究RRAM的RTN和器件间变化1×815/155 000.0090
表 2  RRAM真随机数发生器性能对比
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