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浙江大学学报(工学版)
J4  2011, Vol. 45 Issue (5): 928-933    DOI: 10.3785/j.issn.1008-973X.2011.05.026
化学工程、材料工程     
快速热处理对高能粒子辐照硅中氧沉淀的影响
陈贵锋,马晓薇,吴建海,马巧云,薛晶晶,郝秋艳
河北工业大学 材料学院, 河北省新型功能材料实验室,天津 300130
Effect of rapid thermal process on oxygen precipitates behavior in
silicon irradiated by high energy particles
CHEN Gui-feng, MA Xiao-wei, WU Jian-hai, MA Qiao-yun,
XUE Jing-jing, HAO Qiu-yan
Key Lab. for new type of functional materials in Hebei Province, School of Material Science and Engineering,
Hebei University of Technology, Tianjin 300130, China
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摘要：

研究快速热处理对快中子辐照掺氮直拉硅（NCZ-Si ）和电子辐照直拉硅（CZ-Si）中氧沉淀和清洁区（DZ ）的影响.样品经过不同温度、降温速率和退火气氛快速热处理（RTP）预处理后,再进行高温一步长时间退火,以形成氧沉淀.研究结果表明：对于快中子辐照NCZ-Si,RTP有助于后期退火中DZ的生成,且RTP温度越高,形成的DZ越宽；而高的降温速率会使得DZ宽度变窄；对于电子辐照CZ-Si,在N2气氛下高温RTP更能促进氧沉淀形成,体缺陷（bulk micro defects,BMDS）密度较大.
Abstract:

The oxygen precipitation behavior has been investigated in nitrogen-doped Czochralski silicon (NCZ-Si) irradiated by fastneutron and Czochralski silicon (CZ-Si) irradiated by electron after Rapid Thermal Process (RTP). The samples irradiated by fast-neutron or electron with different dose were treated by post-annealing after RTP pre-annealing at different temperature, cooling rate and ambient. It is found that the RTP process conduces to the denuded zone (DZ) form during the post-annealing treatment in fast-neutron irradiated NCZ-Si wafer. Furthermore, the DZ is getting wider with increasing RTP temperature. On the contrary, the DZ narrowed at high cooling rate. For another thing, the RTP process under N2 ambient in electron irradiated CZ-Si wafer is easy to form the oxygen precipitates and lead to higher density bulk microdefects (BMDS)．
出版日期: 2011-11-24
:  TU 411  
基金资助:

国家自然科学基金资助项目(50872028)；河北省自然科学基金资助项目(E2008000079)；河北省教育厅科研计划资助项目（2009318）.
作者简介: 陈贵锋（1979-）,河北唐山人,讲师,从事半导体缺陷工程研究.E-mail: admat@hebut.edu.cn
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引用本文:

陈贵锋,马晓薇,吴建海,马巧云,薛晶晶,郝秋艳. 快速热处理对高能粒子辐照硅中氧沉淀的影响[J]. J4, 2011, 45(5): 928-933.

CHEN Gui-feng, MA Xiao-wei, WU Jian-hai, MA Qiao-yun, XUE Jing-jing, HAO Qiu-yan. Effect of rapid thermal process on oxygen precipitates behavior in
silicon irradiated by high energy particles. J4, 2011, 45(5): 928-933.

链接本文:

https://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2011.05.026    或    https://www.zjujournals.com/eng/CN/Y2011/V45/I5/928

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