Please wait a minute...
J4  2011, Vol. 45 Issue (6): 1043-1047    DOI: 10.3785/j.issn.1008-973X.2011.06.013
无线电电子学、电信技术     
CMOS兼容的微机械热电堆红外探测器阵列研究
徐德辉1,2, 熊斌1, 王跃林1
1.中国科学院上海微系统与信息技术研究所 传感技术国家重点实验室,微系统技术重点实验室,
上海 200050; 2.中国科学院 研究生院,北京 100039
Study of CMOS compatible micromachined thermopile infra-red
detector array
XU De-hui1,2, XIONG Bin1, WANG Yue-lin1
1. State Key Laboratory of Transducer Technology, Science and Technology on Micro-system Laboratory, Chinese
Academy of Sciences Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
2. Graduate School of Chinese Academy of Sciences, Beijing 100039, China
 全文: PDF  HTML
摘要:

通过设计2种不同微机械热电堆红外探测器阵列结构,对微机械热电堆红外探测器阵列性能进行研究.阵列器件采用二维的面阵列结构,单元探测器分别以串联和并联2种方式分别组成阵列,微机械热电堆的热电偶材料采用N型多晶硅和铝,结构支撑膜为氧化硅-氮化硅-氧化硅复合介质膜,悬浮绝热结构通过前端XeF2干法各向同性硅腐蚀工艺制作.采用XeF2干法工艺对器件进行最终释放,器件成品率得到了很大的提高;热电堆的材料及制造工艺都与标准CMOS技术完全兼容,降低了器件的制作成本,并且能够适用于器件的批量生产.试验结果表明:并联方式的阵列可以实现红外探测并行扫描的功能,串联的阵列则可以进一步提高红外探测器的输出电压及探测率,但不能提高器件的响应率.

Abstract:

Two 2×2 parallel-connected and series-connected micromachined thermopile infra-red (IR) detector arrays were designed and fabricated. The N-poly/Al thermocouples were placed on a floating SiO2-Si3N4-SiO2 dielectric membrane, which was released by XeF2 front-side dry isotropic etching. Since XeF2 dry etching process was used for the thermopile structure release, the fabrication yield is enhanced; because both the material and process are fully compatible with CMOS technology, the fabrication cost is reduced and the fabricated detector arrays also have the potential for mass production. For the two-dimensional parallel-connected thermopile IR detector array, the experimental results show that the parallel-connected structure can be used for scanningarea IR detection. For the seriesconnected thermopile IR detector array, the experimental results show that the series-connected structure can improve the detector's output voltage and specific detectivity, but without the improvement of responsivity.

出版日期: 2011-07-14
:  TN 379  
通讯作者: 熊斌,男,研究员.     E-mail: bxiong@mail.sim.ac.cn
作者简介: 徐德辉(1985—),男,博士生,主要从事MEMS技术研究.E-mail:dehuixu@mail.sim.ac.cn
服务  
把本文推荐给朋友
加入引用管理器
E-mail Alert
作者相关文章  

引用本文:

徐德辉, 熊斌, 王跃林. CMOS兼容的微机械热电堆红外探测器阵列研究[J]. J4, 2011, 45(6): 1043-1047.

XU De-hui, XIONG Bin, WANG Yue-lin. Study of CMOS compatible micromachined thermopile infra-red
detector array. J4, 2011, 45(6): 1043-1047.

链接本文:

https://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2011.06.013        https://www.zjujournals.com/eng/CN/Y2011/V45/I6/1043

[1] BALTES H, PAUL O, BRAND O. Micromachined thermally based CMOS microsensors[J].Proceedings of the IEEE, 1998, 86(8): 1660-1678.
[2 ] GRAF A, ARNDT M, SAUER M, et al. Review of micromachined thermopiles for infrared detection [J].Measurement Science & Technology, 2007, 18(7): R59-R75.
[3] 向桂山,王宣银,刘西亮.大距离吸收红外测温仪的关键技术研究[J].浙江大学学报:工学版,2006,40(12):2112-2116.
XIANG Guishan, WANG Xuanyin, LIU Xiliang. Research on key technology of longdistancecoefficient infrared thermoscope [J]. Journal of Zhejiang University: Engineering Scinces, 2006, 40(12): 2112-2116.
[4] 邹令敏,郝晓剑,周汉昌.基于MEMS热电堆传感器的高温测量技术[J].计量与测试技术,2009,36(8):25-27.
ZHOU Lingmin, HAO Xiaojian, ZHOU Hanchang. The high temperature measurement technology based on MEMS thermopile sensor [J]. Metrology & Measurement Technique, 2009, 36(8): 25-27.
[5] 蔡小五,马斌,梁平治.微机械非制冷红外热电堆探测器[J].红外技术,2005,27(1):34-38.
CAI Xiaowu, MA Bin, LIANG Pingzhi. Micromachined uncooled infrared thermopile detector [J]. Infrared Technology, 2005, 27(1): 34-38.
[6] Application Brief 1: A Simple DC Radiometer [EB/OL].[ 2006-11-12]. http:∥www.dexterresearch.com/system/files/protected_documents/8542_Rev_C.pdf.
[7] LARRY Godfrey.Choosing the detector for your unique light sensing application. [EB/OL]. 20031102. www.optoelectronics.perkinelmer.com.

[8] 徐峥谊.微机械热电堆红外探测器[D].上海:中国科学院上海微系统与信息技术研究所,2002.
XU Zhenyi. Micromachined thermopile infrared detector [D]. Shanghai: Shanghai Institute of Microsystem and Information Technology, 2002.
[9] 杨恒昭.CMOS兼容的干法刻蚀释放热电堆红外探测器[D].上海:中国科学院上海微系统与信息技术研究所,2008.
YANG Hengzhao. CMOS compatible thermopile infrared detector released by dry etching [D]. Shanghai: Shanghai Institute of Microsystem and Information Technology, 2008.
[10] SCHNEEBERGER N, PAUL O, BALTES H, Optimized structured absorbers for CMOS infrared detectors[C]∥Proceedings of the The 8th International Conference on SolidState Sensors and Actuators. Stockholm: IEEE, 1995: 648-651.
[11] XU Dehui, XIONG Bin, WANG Yuelin, et al. Integrated thermoelectric infrared sensor with XeF2 etching [C]∥Proceedings of the 3rd SPIE International Symposium on Photoelectric Detection and Imaging. Beijing:SPIE,2009: 198-203.
[12] 杨恒昭,熊斌,李铁,等.CMOS工艺兼容的热电堆红外探测器[J].半导体技术,2008,33(9):759-765.
YANG Hengzhao, XIONG Bin, LI Tie, et al. CMOS process compatible thermopile infrared detector [J]. Semiconductor Technology, 2008, 33(9): 759-765.
[13] XU Dehui, XIONG Bin, WANG Yuelin, et al. Hybrid Etching process and its application in thermopile infrared sensor [C]∥ Proceedings of the 2010 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. Xiamen:IEEE, 2010: 417-420.

No related articles found!