电气工程 |
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用于RF-LDMOS的分布式电热耦合模型 |
孙晓红1,3,张晓东2,胡善文1,3,戴文华4,高 怀1,3 |
1.东南大学 国家ASIC系统工程中心,江苏 南京 210096; 2. 苏州英诺迅科技有限公司 江苏 苏州 215123; 3.东南大学苏州研究院 高频高功率器件与集成技术研究中心,江苏 苏州 215123; 4.Infineon Technologies North America Corp, 18275 Serene Drive, Morgan Hill, CA 95037, United States |
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Distributed electro-thermal RF-LDMOS model |
SUN Xiao-hong1,3, ZHANG Xiao-dong2, HU Shan-wen1,3, DAI Wen-hua4, GAO Huai1,3 |
1.National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China; 2.Suzhou Innotion Tech. Co., Ltd.,Suzhou 215123,China;3.High Frequency & High Power Device and Integrated Technology Research Center, Research Institute of Southeast University at Suzhou, Suzhou 215123, China; 4.Infineon Technologies North America Corp, 18275 Serene Drive,Morgan Hill, CA 95037 United States |
引用本文:
孙晓红,张晓东,胡善文,戴文华,高 怀. 用于RF-LDMOS的分布式电热耦合模型[J]. J4, 2011, 45(5): 831-834.
SUN Xiao-hong, ZHANG Xiao-dong, HU Shan-wen, DAI Wen-hua, GAO Huai. Distributed electro-thermal RF-LDMOS model. J4, 2011, 45(5): 831-834.
链接本文:
https://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2011.05.009
或
https://www.zjujournals.com/eng/CN/Y2011/V45/I5/831
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