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J4  2009, Vol. 43 Issue (11): 2006-2011    DOI: 10.3785/j.issn.1008-973X.2009.11.011
    
Low dropout linear regulator with no off-chip capacitor and low power consumption
CUI Chuan-rong, GONG Wen-chao, WANG Yi, HE Le-nian
(Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China)
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Abstract  

A low dropout linear regulator (LDO) with no off-chip capacitor and maximal output current of 100 mA and 3.3 V output voltage was designed and implemented by using CSMCs 0.5 μm mixed-signal technology. By using a parallel structure constituted by differentiator, Miller capacitor and error amplifier, the circuit can supply a large current for state conversion in a moment. Therefore, when the load current or supply voltage changes, the varieties of transient output voltage are acceptable under the condition of no off-chip capacitor. The chip testing results revealed that under the supply voltage of 5 V, as the load current decreased from 100 mA to 1 mA within 1 μs, the ripple of output voltage was less than 600 mV; and the quiescent current was measured to be less than 4.5 μA. The designed circuit was validated by the results of the chip test.



Published: 01 November 2009
CLC:  TN 401  
  TN 86  
Cite this article:

CUI Chuan-Rong, GONG Wen-Chao, WANG Yi, et al. Low dropout linear regulator with no off-chip capacitor and low power consumption. J4, 2009, 43(11): 2006-2011.

URL:

http://www.zjujournals.com/eng/10.3785/j.issn.1008-973X.2009.11.011     OR     http://www.zjujournals.com/eng/Y2009/V43/I11/2006


低功耗无片外电容的低压差线性稳压器

设计了输出电压为3.3 V,最大输出电流为100 mA的无片外电容低压差线性稳压器(LDO).该芯片采用并行结构的微分器和大米勒电容,通过比例调节和微分调节结合的方式,利用微分器电路在瞬间提供大的转换电流,克服了无片外电容LDO在负载和电源电压变化时输出电压跳变过大的问题.芯片采用CSMC公司0.5 μm工艺模型设计,并经过流片.测试结果表明,在5 V工作电压下,当负载电流从100 mA在1 μs内下降到1 mA时,输出电压变化小于600 mV;电路的静态电流小于4.5 μA.测试结果验证了电路设计的正确性.

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