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浙江大学学报(工学版)
浙江大学学报(工学版)  2024, Vol. 58 Issue (2): 325-333    DOI: 10.3785/j.issn.1008-973X.2024.02.011
计算机技术、通信技术     
硅基集成光开关阵列的高速驱动控制电路设计
张毅远1(),武雅婷1,米光灿2,黄莹1,储涛1,*()
1. 浙江大学 信息与电子工程学院，浙江 杭州 310027
2. 华为技术有限公司，广东 东莞 523145
Design of high-speed driving control circuit for integrated silicon photonic switch matrix
Yiyuan ZHANG1(),Yating WU1,Guangcan MI2,Ying HUANG1,Tao CHU1,*()
1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
2. Huawei Technologies Limited Company, Dongguan 523145, China
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摘要：

通过分析光开关单元的物理结构，提出等效电学模型，用于模拟光开关单元的瞬态响应. 基于该模型，针对光开关阵列设计高速驱动控制电路，结合仿真探究电压尖峰对光开关单元瞬态响应的影响. 系统测试结果表明，驱动电路施加的电压信号的上升/下降时间为1.7/1.6 ns，能够满足高速光开关纳秒级切换速度的需求. 在该驱动电路的配合下，光开关阵列的切换时间为2.1~5.9 ns，实现了较先进的高速光交换系统.
关键词： 光通信;  光互连;  硅基光子学;  硅基光开关;  驱动控制电路    
Abstract:

An equivalent electrical model was proposed for simulating the transient responses of a photonic switch cell by analyzing its physical structure. A high-speed driving control circuit was designed for a photonic switch matrix based on the model, and the effect of voltage spikes on the transient response of photonic switch cell was analyzed by simulation. The test results show that the rise/fall time of the signal supplied by the driving circuit are 1.7/1.6 ns, which meets the requirements for nanosecond-level switching of high-speed photonic switches. The switching time of the photonic switch matrix reaches 2.1?5.9 ns with the assistance of the driving control circuits, realizing a high-speed optical switching system.
Key words: optical communication    optical interconnection    silicon photonics    silicon photonic switch    driving control circuit
收稿日期: 2023-05-23 出版日期: 2024-01-23
CLC:  TN 41  
基金资助: 国家自然科学基金资助项目（62035001）
通讯作者: 储涛     E-mail: zhang_yiyuan@zju.edu.cn;chutao@zju.edu.cn
作者简介: 张毅远（1996—），男，硕士生，从事高速/射频电路的设计. orcid.org/0009-0009-9522-6216. E-mail：zhang_yiyuan@zju.edu.cn
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引用本文:

张毅远,武雅婷,米光灿,黄莹,储涛. 硅基集成光开关阵列的高速驱动控制电路设计[J]. 浙江大学学报(工学版), 2024, 58(2): 325-333.

Yiyuan ZHANG,Yating WU,Guangcan MI,Ying HUANG,Tao CHU. Design of high-speed driving control circuit for integrated silicon photonic switch matrix. Journal of ZheJiang University (Engineering Science), 2024, 58(2): 325-333.

链接本文:

https://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2024.02.011    或    https://www.zjujournals.com/eng/CN/Y2024/V58/I2/325

图 1  光开关单元的基本结构和工作状态
图 2  光开关单元等效电学模型的示意图
图 3  光开关单元伏安特性的仿真结果
图 4  光开关切换过程中相移臂电流和有效折射率的变化
图 5  等效电学模型和光开关单元的瞬态特性对比
图 6  等效电学模型的瞬态响应分析
图 7  光开关阵列高速驱动控制电路的系统框图
图 8  等效电路模型作为负载的电路瞬态响应仿真结果
图 9  斜坡信号及其激励下的电容电压响应分析
图 10  不同激励信号下的电容电压响应情况
图 11  不同激励信号下光开关单元的有效折射率变化
图 12  驱动电路及光开关阵列的芯片封装
图 13  8×8光开关阵列的示意图
图 14  静态/瞬态测试系统框图
图 15  待测光开关单元的静态测试结果
图 16  系统瞬态响应的测试结果
切换单元光路传输情况tr, tf /
ns		切换单元光路传输情况tr, tf /
ns
S310→0'/1'2.8, 3.1所有单元0→0'/7'3.1, 3.3
1→1'/0'2.7, 2.31→1'/6'2.9, 2.4
S320→2'/3'2.5, 4.12→2'/5'2.9, 4.8
3→3'/2'3.8, 2.43→3'/4'4.2, 2.5
S330→4'/5'2.2, 4.64→4'/3'2.6, 4.7
5→5'/4'4.5, 2.15→5'/2'4.8, 2.6
S340→6'/7'5.3, 2.46→6'/1'5.9, 2.4
7→7'/6'2.2, 4.37→7'/0'2.1, 4.7
表 1  光开关阵列在不同路径下的工作情况
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