电信技术 |
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SiC/SiO2界面形貌对SiC MOS器件沟道迁移率的影响 |
刘莉, 杨银堂 |
西安电子科技大学 微电子学院,陕西 西安 710071 |
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Effection of morphology of SiC/SiO2 interface on mobility characteristics of MOS devices |
LIU Li, YANG Yin tang |
Microelectronics Institute,Xi Dian University,Xi’an Shaanxi 710071 China |
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