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浙江大学学报(工学版)
浙江大学学报(工学版)  2021, Vol. 55 Issue (4): 665-674    DOI: 10.3785/j.issn.1008-973X.2021.04.008
计算机技术、电信技术     
嵌入式微通道传热特性及局部热点尺度效应
邱云龙(),胡文杰,吴昌聚*(),陈伟芳
浙江大学 航空航天学院，浙江 杭州 310027
Heat transfer performance and scale effect of hot spots in embedded microchannel cooling system
Yun-long QIU(),Wen-jie HU,Chang-ju WU*(),Wei-fang CHEN
School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
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摘要：

通过实验测试结合理论分析，研究嵌入式微通道冷却系统的传热特性及局部热点的尺度效应. 测试芯片加工采用MEMS工艺，微通道层与顶层之间的连接采用硅硅直接键合，芯片与电路板（PCB）之间的连接采用倒装焊接. 研究结果表明，采用嵌入式微通道设计极大地缩短了微芯片到微通道的导热距离，可以显著地减小微芯片到环境的热阻. 根据测试结果可知，在100 W/cm2均匀热流密度的条件下，使用6.84 mW/cm2的泵功，可以将模拟IC热源的温升控制到小于40 K，能效比超过14 000. 在非均匀热流密度的条件下，局部热点的存在会增大导热热阻在总热阻中的占比，局部热点尺度越小，热点附近的侧向热传导越严重，导热热阻越大，这减小了对流换热热阻在热点区域总热阻中的占比，使得增大对流换热系数带来的总热阻降低效果减弱.
关键词： 芯片冷却;  微通道;  MEMS;  局部热点;  热阻;  对流换热    
Abstract:

An experimental and theoretical study was presented to analyze the heat transfer performance and the scale effect of hot spots in embedded microchannel liquid cooling system. MEMS micromachining was used to fabricate the test chip, silicon-to-silicon direct bonding was used to bond the microchannel layer to the silicon cover, and Flip-chip bonding was used to bond the test chip to a printed circuit board. Results show that the embedded-microchannel design greatly reduces the thermal conduction distance from the microchip to the microchannel, resulting in a low thermal resistance from the microchip to environment. The test results show that the temperature rise of the simulated IC under a uniform heat flux of 100 W/cm2 can be controlled within 40 K using only 6.84 mW/cm2 of pumping power with a coefficient of performance exceeding 14 000. The existence of hot spots increases the proportion of the heat conduction resistance in the total thermal resistance of the hot spot area under a non-uniform heat flux. The smaller the size of the hot spot area was, the more serious the lateral heat conduction was and the thermal conduction resistance became larger, which indirectly reduced the proportion of the heat convection resistance in the total thermal resistance of the hot spot area. Then the benefit of increasing the convective heat transfer coefficient on decreasing the total thermal resistance of the hot spot area was decreased.
Key words: chip cooling    microchannel    MEMS    hot spot    thermal resistance    heat convection
收稿日期: 2020-09-15 出版日期: 2021-05-07
CLC:  TN 30  
基金资助: 国家自然科学基金资助项目（51575487）；国家自然科学基金重大科研仪器研制项目（6162790014）
通讯作者: 吴昌聚     E-mail: qyl1992@zju.edu.cn;wuchangju@zju.edu.cn
作者简介: 邱云龙（1992—），男，博士生，从事微电子冷却与微流控技术的研究. orcid.org/0000-0002-2873-743X.E-mail： qyl1992@zju.edu.cn
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引用本文:

邱云龙,胡文杰,吴昌聚,陈伟芳. 嵌入式微通道传热特性及局部热点尺度效应[J]. 浙江大学学报(工学版), 2021, 55(4): 665-674.

Yun-long QIU,Wen-jie HU,Chang-ju WU,Wei-fang CHEN. Heat transfer performance and scale effect of hot spots in embedded microchannel cooling system. Journal of ZheJiang University (Engineering Science), 2021, 55(4): 665-674.

链接本文:

http://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2021.04.008    或    http://www.zjujournals.com/eng/CN/Y2021/V55/I4/665

图 1  实验系统示意图与测试芯片实物照片
图 2  Ti/Pt电极层的结构图
图 3  测试芯片的制造流程
图 4  微通道阵列的SEM照片
类别 参数 不确定度
直接测量量 冷却介质体积流量 ±0.5%
直接测量量 来流（环境）温度 ±0.2 K
直接测量量 小型电阻温度 ±0.42 K
直接测量量 大型电阻温度 ±0.45 K
直接测量量 压降 ±4.5%（max）
间接测量量 IC-流体总热阻 ±5.0%（max）
表 1  各测量参数的不确定度
图 5  芯片各热阻分量及其在IC-环境总热阻中的占比随微通道体积流量的变化情况
图 6  qV = 60 mL/min条件下，大尺度局部热点对模拟芯片温升的影响
图 7  在qV = 60 mL/min的条件下，大尺度局部热点对各区域当地IC-流体热阻的影响性
图 8  热点区域的热阻简化模型
图 9  qV = 60 mL/min条件下，1号芯片SHS区域热流增长引起标记区域S1~S7的温升变化量ΔT
图 10  qV = 60 mL/min条件下，1号芯片背景热流密度对小尺度局部热点区域温升变化量ΔT的影响
图 11  当背景区域热流密度为50 W/cm2，SHS区域热流密度为870 W/cm2时，小尺度局部热点与微通道相对位置对ΔT的影响
图 12  当背景区域热流密度为50 W/cm2，LHS区域热流密度为100 W/cm2时，微通道体积流量对LHS区域IC-环境温升T的影响
图 13  当背景区域热流密度为50 W/cm2，SHS区域热流密度为870 W/cm2时，微通道体积流量对1号芯片SHS区域IC-环境温升T的影响
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