28 nm RRAM-based reconfigurable true random number generator

doi:10.3785/j.issn.1008-973X.2024.07.021

Journal of ZheJiang University (Engineering Science)

2024, Vol. 58

Issue (7): 1516-1523 DOI: 10.3785/j.issn.1008-973X.2024.07.021

28 nm RRAM-based reconfigurable true random number generator

Changkun SONG(

),Caiping ZHENG,Chengying CHEN*(

)

School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

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Abstract

An alternating read and write mode was proposed based on the current-starved ring oscillator (CSRO) true random number generator (TRNG) with resistance random access memory (RRAM), and the entropy source reconstruction scheme was optimized. An entropy configurable resistance window clamping circuit (ECRWCC) was proposed to address the trans conductor linearization issues of RRAM under multiple operating cycles. By reducing the resistance window to maximize the nonlinearity of RRAM, the phenomenon of over-set and over-reset was effectively avoided in ECRWCC, and the stability of the entropy source was ensured. The TRNG was tapeout with a UMC 28 nm HKMG process. The statistical test results of the output data passed the true random number standard test for all test sets of NIST SP800-22. The results showed that within the 95% confidence interval of the Gaussian distribution, the autocorrelation function, of all statistics were in the range of ?0.003 and 0.003, and the output sequence had good randomness.

Key words： resistive random access memory (RRAM) true random number generator (TRNG) entropy source current-starved ring oscillator translinear

Received: 03 June 2023 Published: 01 July 2024

CLC:

TN 453

Fund: 福建省自然科学基金引导性项目（2023H0052）；厦门市重大科技项目（3502Z20221022）.

Corresponding Authors: Chengying CHEN E-mail: 2017000002@xmut.edu.cn;chenchengying@xmut.edu.cn

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Cite this article:

Changkun SONG,Caiping ZHENG,Chengying CHEN. 28 nm RRAM-based reconfigurable true random number generator. Journal of ZheJiang University (Engineering Science), 2024, 58(7): 1516-1523.

URL:

https://www.zjujournals.com/eng/10.3785/j.issn.1008-973X.2024.07.021 OR https://www.zjujournals.com/eng/Y2024/V58/I7/1516

基于28 nm RRAM的可重构真随机数发生器

基于阻变存储器（RRAM）电流饥饿型环形振荡器的真随机数发生器（TRNG）方案，提出交替读写的操作模式，优化熵源重构机制. 针对现有RRAM在多操作周期下跨导线性化问题，提出熵可配置电阻窗口钳位电路. 通过减小电阻窗口获得RRAM非线性的最大化，所提电路能够有效避免RRAM出现过度置位、过度复位的现象，保证熵源稳定性. 基于UMC 28 nm HKMG工艺对TRNG进行流片. 输出数据统计性测试结果通过了NIST SP800-22所有测试集的真随机数标准测试. 检测结果表明，在高斯分布的95%置信区间，所有统计数据的自相关函数值均落在?0.003~0.003，输出序列具有良好的随机性.

关键词： 阻变存储器(RRAM), 真随机数发生器（TRNG）, 熵源, 电流饥饿型环形振荡器, 跨导线性

Fig.1 Structural diagram of RRAM device

Fig.2 Circuit structure of reconfigurable RRAM true random number generator

Fig.3 Logic array diagram of RRAM transfer gate

Fig.4 RRAM cell reconstruction circuit based on H-bridge

Fig.5 H-bridge based RRAM entropy source reconstruction circuit with resistance window clamping

Fig.6 HfO₂-based RRAM set and reset time versus bias voltage

Fig.7 Comparator for rail to rail common mode input rang

Fig.8 Complete circuit combining voltage-to-current conversion circuit and current-starved ring oscillator

Fig.9 Output frequency distribution of current-starved ring oscillator

Fig.10 Phase noise of current-starved ring oscillator

Fig.11 Entropy source post-processing circuit

Fig.12 Test unit of RRAM true random number generator

Fig.13 true random number generator wafer and test platform

Fig.14 Time domain waveform of input and output of post-processing circuit

Fig.15 Output bitmap image before and after entropy source post-processing

Fig.16 Auto correlation properties of output

Tab.1 Summary table of NIST text results

Tab.2 Performance comparison of RRAM-based true random number generator


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