Review on metal-oxide materials applied in planar perovskite solar cells
Li XIAO1(),Yuan-hao CHEN1,Chang-xing LIANG1,Jian-xi YAO2
1. Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing University of Technology, Chongqing 400054, China 2. Beijing Key Laboratory of Energy Safety and Clean Utilization, North China Electric Power University, Beijing 102206, China
As the carrier transport layer in planar perovskite solar cells, metal oxide films have important influence on device properties. The requirements of metal oxide films for planar solar cells in the respect of the morphology, electrical, optical, chemical and thermal properties were systematically overviewed. Worthwhile, the materials characteristic and representative work involving the most promising metal oxide film work as electron transport layer or hole transport layer material were summarized. Research progress of adopting methods such as element doping of metal oxides, surface modification of film and design of composite metal oxide film to improving film mobility, minimizing surface defects and adjusting energy level were proposed. Moreover, the future requirement and the improvement direction of metal oxide thin film deposition technology were discussed after summarizing the advantages and disadvantages of the deposition technology. Finally, the application of low-temperature deposited metal oxide films in flexible devices was expected.
Li XIAO,Yuan-hao CHEN,Chang-xing LIANG,Jian-xi YAO. Review on metal-oxide materials applied in planar perovskite solar cells. Journal of ZheJiang University (Engineering Science), 2021, 55(8): 1576-1584.
Fig.1Efficiency development of perovskite solar cells
Fig.2Typical structure of planar PSCs
Fig.3Energy band alignment and carrier transfer diagram in typical planar PSCs[9]
Fig.4Scanning electron micrographs of SnO2 layers deposited by atomic layer deposition, spin coating and spin coating combined chemical bath deposition[12]
材料种类
VBM/eV
CBM/eV
Eg/eV
μ/（cm2·V?1·s?1）
ETL
TiO2
?7.3
?4.1
3.0~3.2
1
SnO2
?7.9
?4.3
3.6~4.0
250
ZnO
?7.47
?4.17
3.3
200
Zn2SnO4
?7.9
?4.1
3.8
10~30
HTL
NiOx
?5.0~?5.4
?1.29
3.71~4.11
2.8
CuOx
?5.4
?3.3~?4.1
1.4~2.1
100
Tab.1Characteristic parameters of main carrier transport materials[8,10]
Fig.5Schematic diagram of preparing metal-oxide film by spin coating
Fig.6Schematic diagram of preparing metal-oxide film by chemical bath deposition[12]
Fig.7Schematic diagram of preparing metal-oxide film by atom layer deposition[41]
Fig.8Schematic diagram of preparing metal-oxide film by pulsed laser deposition
Fig.9Schematic diagram of preparing SnO2@TiO2 bilayer film by combining anodization and spin-coating
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