| 电子与电气工程 |
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| 噪声系数最小1.6 dB有高带外抑制的5~6 GHz射频接收前端芯片 |
傅海鹏( ),程志强 |
| 天津大学 微电子学院，天津 300072 |
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| 5-6 GHz RF receiver front-end with 1.6 dB minimum noise figure and high out-of-band suppression |
| Haipeng FU(),Zhiqiang CHENG |
| School of Microelectronics, Tianjin University, Tianjin 300072, China |
| 1 |
SHIRMOHAMMADI B, YAVARI M A linear wideband CMOS balun-LNA with balanced loads[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, 69 (3): 754- 758
|
| 2 |
PANG D, GUI Y, WU S, et al. An ultra-wideband low noise amplifier design in 0.13-um CMOS technology [C]// 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications . Zhuhai: IEEE, 2021: 43–44.
|
| 3 |
MUSTAPHA A A, GAYA S, MOHAMMAD B, et al. Wideband low noise amplifiers for mm-wave 5G application using capacitive feedback technique in 22nm FDSOI [C]// 2021 28th IEEE International Conference on Electronics, Circuits, and Systems . Dubai: IEEE, 2021.
|
| 4 |
BOZORG A, STASZEWSKI R B A 0.02–4.5-GHz LN(T)A in 28-nm CMOS for 5G exploiting noise reduction and current reuse[J]. IEEE Journal of Solid-State Circuits, 2021, 56 (2): 404- 415
doi: 10.1109/JSSC.2020.3018680
|
| 5 |
胡锦, 翟媛, 郝明丽, 等 应用于WLAN的SiGe射频功率放大器的设计[J]. 湖南大学学报: 自然科学版, 2012, 39 (10): 56- 59
HU Jin, ZHAI Yuan, HAO Mingli, et al Design of SiGe RF power amplifier for WLAN[J]. Journal of Hunan University: Natural Sciences, 2012, 39 (10): 56- 59
|
| 6 |
LI C, WANG X, JAIN V, et al. 2.4/5.5GHz LNA switch designs based on high resistive substrate 0.35 μm SiGe BiCMOS [C]// 2015 IEEE 11th International Conference on ASIC . Chengdu: IEEE, 2015: 1–4.
|
| 7 |
ZOU T, XU H, WANG Y, et al. A capacitor assisting triple-winding transformer low-noise amplifier with 0.8-1.5dB NF 6-12GHz BW ±0.75dB Ripple in 130nm SOI CMOS [C]// 2022 IEEE Radio Frequency Integrated Circuits Symposium . Denver: IEEE, 2022: 231–234.
|
| 8 |
PARAT D, SERHAN A, REYNIER P, et al. A linear high-power reconfigurable SOI-CMOS front-end module for WI-FI 6/6E applications [C]// 2022 IEEE Radio Frequency Integrated Circuits Symposium . Denver: IEEE, 2022: 39–42.
|
| 9 |
NYSSENS L, RACK M, WANE S, et al. A 2.5-2.6 dB noise figure LNA for 39 GHz band in 22 nm FD-SOI with back-gate bias tunability [C]// 2022 17th European Microwave Integrated Circuits Conference . Milan: IEEE, 2022: 60–63.
|
| 10 |
GAO H, SHI J, LIN F. A wideband LNA with gm-boosted and noise cancel technique [C]// 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications . Nanjing: IEEE, 2020: 17–18.
|
| 11 |
SHAMS N, KAKHKI A P, NABKI F. Reconfigurable IR-UWB current mode switched receiver for IoT applications [C]// 2019 26th IEEE International Conference on Electronics, Circuits and Systems . Genoa: IEEE, 2019: 9–12.
|
| 12 |
曾志, 李远鹏, 陈长友 具有带外抑制特性的Ka波段低功耗低噪声放大器[J]. 半导体技术, 2021, 46 (1): 36- 40
ZENG Zhi, LI Yuanpeng, CHEN Changyou Ka-band low power consumption and low noise amplifier with out-of-band suppression characteristic[J]. Semiconductor Technology, 2021, 46 (1): 36- 40
|
| 13 |
ZHANG J, ZHAO D, YOU X Analysis and design of a CMOS LNA with transformer-based integrated notch filter for Ku-band satellite communications[J]. IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (1): 790- 800
doi: 10.1109/TMTT.2021.3126858
|
| 14 |
LEE D, KWON K CMOS channel-selection LNA with a feedforward N-path filter and calibrated blocker cancellation path for FEM-less cellular transceivers[J]. IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (3): 1810- 1820
doi: 10.1109/TMTT.2022.3142140
|
| 15 |
余巨臣, 彭龙新, 刘昊, 等 具有带外抑制的限幅低噪声放大器一体化设计[J]. 半导体技术, 2022, 47 (6): 493- 497
YU Juchen, PENG Longxin, LIU Hao, et al Integrated design of limiter low noise amplifier with out-of-band rejection[J]. Semiconductor Technology, 2022, 47 (6): 493- 497
|
| 16 |
MALEK M I, SAINI S. Improved two stage ultra-wideband CMOS low noise amplifier with out band rejection using low noise active inductor [C]// 2015 International Conference on Signal Processing and Communication Engineering Systems . Guntur: IEEE, 2015: 157–161.
|
| 17 |
LI Y, LI X, HUANG Z, et al A novel low-power notch-enhanced active filter for ultrawideband interferer rejected LNA[J]. IEEE Transactions on Microwave Theory and Techniques, 2021, 69 (3): 1684- 1697
doi: 10.1109/TMTT.2021.3053264
|
| 18 |
KWON K, KIM S, SON K Y A hybrid transformer-based CMOS duplexer with a single-ended notch-filtered LNA for highly integrated tunable RF front-ends[J]. IEEE Microwave and Wireless Components Letters, 2018, 28 (11): 1032- 1034
doi: 10.1109/LMWC.2018.2869302
|
| 19 |
池保勇, 余志平, 石秉学, 等. CMOS射频集成电路分析与设计[M]. 北京: 清华大学出版社, 2006: 157–211.
|
| 20 |
NGUYEN T K, OH N J, CHOI H C, et al. CMOS low noise amplifier design optimization technique [C]// The 2004 47th Midwest Symposium on Circuits and Systems . Hiroshima: IEEE, 2004.
|
| 21 |
KIM B K, IM D, CHOI J, et al A highly linear 1 GHz 1.3 dB NF CMOS low-noise amplifier with complementary transconductance linearization[J]. IEEE Journal of Solid-State Circuits, 2014, 49 (6): 1286- 1302
doi: 10.1109/JSSC.2014.2319262
|
| 22 |
GUO B, CHEN J, LI L, et al A wideband noise-canceling CMOS LNA with enhanced linearity by using complementary nMOS and pMOS configurations[J]. IEEE Journal of Solid-State Circuits, 2017, 52 (5): 1331- 1344
doi: 10.1109/JSSC.2017.2657598
|
| 23 |
倪冬欣, 彭龙新, 李建平, 等 5~6 GHz限幅低噪声放大器的研制[J]. 固体电子学研究与进展, 2020, 40 (1): 18- 22
NI Dongxin, PENG Longxin, LI Jianping, et al Development of a 5~6 GHz limiter low noise amplifier[J]. Research and Progress of SSE, 2020, 40 (1): 18- 22
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