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浙江大学学报(工学版)  2017, Vol. 51 Issue (8): 1676-1680    DOI: 10.3785/j.issn.1008-973X.2017.08.026
张峰1,2, 刘畅1, 黄鲁1, 吴宗国2
1. 中国科学技术大学 信息科学技术学院, 安徽 合肥 230026;
2. 中国科学院自动化研究所 国家专用集成电路设计 工程技术研究中心, 北京 100190
Robust ESD protection device based on dual-direction silicon controlled rectifier
ZHANG Feng1,2, LIU Chang1, HUANG Lu1, WU Zong-guo2
1. School of Electronics Engineering and Computer Science, University of Science and Technology of China, Hefei 230026, China;
2. National ASIC Design Engineering Center, Institute of Automation, Chinese Academy of Sciences, Beijing 100190, China
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针对双向可控硅(DDSCR)器件的静电放电(ESD)鲁棒性,提出在N阱中加入N+注入区(DDSCR_N+)和在N阱中加入P+注入区(DDSCR_P+)2种改进型DDSCR结构,采用华润上华0.5 μm Bipolar-CMOS-DMOS(BCD)工艺,分别制备传统DDSCR结构以及2种改进型DDSCR结构,通过半导体工艺及器件模拟工具(TCAD)进行仿真,分析不同结构的电流密度和ESD鲁棒性差异;流片后通过传输线脉冲测试(TLP)方法测试不同结构ESD防护器件特性.仿真和测试结果表明,改进型DDSCR_N+结构在具有和传统DDSCR器件的相同的触发和维持电压前提下,二次击穿电流比传统的DDSCR结构提高了160%,ESD鲁棒性更强,适用范围更广.


A typical dual-direction silicon controlled rectifier (DDSCR) and two new DDSCR were designed and fabricated based on CSMC 0.5 μm Bipolar-CMOS-DMOS (BCD) process in order to study the ESD robustness of DDSCR. The new structures include DDSCR with additional N+ implant in NWELL and additional P+ implant in NWELL. The total current density and ESD robustness of those three structures were analyzed with the simulation of TCAD software. Key features of those ESD protection devices were compared by TLP testing after tape-out. Both simulation and test results show that, DDSCR_N+ almost has the same triggering voltage and holding voltage of the proposed devices as the conventional DDSCR. DDSCR_N+ provides 160% improvement of secondary breakdown current and exhibits the stronger ESD robustness.

收稿日期: 2016-06-20 出版日期: 2017-08-16
CLC:  TN335  
作者简介: 张峰(1977-),男,高级工程师,从事数字信号隔离器,智能弹药等研究
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张峰, 刘畅, 黄鲁, 吴宗国. 基于双向可控硅的强鲁棒性静电防护器件[J]. 浙江大学学报(工学版), 2017, 51(8): 1676-1680.

ZHANG Feng, LIU Chang, HUANG Lu, WU Zong-guo. Robust ESD protection device based on dual-direction silicon controlled rectifier. JOURNAL OF ZHEJIANG UNIVERSITY (ENGINEERING SCIENCE), 2017, 51(8): 1676-1680.


[1] DUVVURY C. ESD protection device issues for IC designs[C]//2001 IEEE Custom Integrated Circuits. San Diego,USA:IEEE, 2001:41-48.
[2] KER M D, HSU K C. Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits[J]. IEEE Transactions on Device and Materials Reliability, 2005, 5(2):235-249.
[3] SALCEDO J A, LIOU J J, BERBIER J C. Design and integration of novel SCR-based devices for ESD protection in CMOS/BiCMOS technologies[J]. IEEE Transactions on Electron Devices, 2005, 52(12):2682-2689.
[4] 李冰,王刚,杨袁渊.基于SCR的ESD保护电路防闩锁设计[J].微电子学,2009,39(6):786-789. LI Bing, WANG Gang, YANG Yuan-yuan. Latch-up free design of SCR-based ESD protection circuits[J]. Microelectronics, 2009, 39(6):786-789.
[5] LIU Z W, VINSON J, LOU L F, et al. An improved bidirectional SCR structure for low-triggering ESD protection applications[J]. IEEE Electron Device Letters, 2008, 29(4):360-362.
[6] WANG Y, JIN X L, YANG L, et al. Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection[J]. Microelectronics Reliability, 2015, 55(3):520-526.
[7] VASHCHENKO V A, HOPPER P J. New dual-direction ESD device in Si-Ge BiCMOS process[C]//2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology. Shanghai:IEEE, 2010:935-937.
[8] 梁海莲,董树荣,顾晓峰,等.基于0.5μm BCD工艺的双向SCR结构的ESD保护设计[J].浙江大学学报:工学版,2013, 47(11):2046-2050. LIANG Hai-lian, DONG Shu-rong, GU Xiao-feng, et al. ESD protection design of DDSCR structure based on the 0.5μm BCD process[J]. Journal of Zhejiang University:Engineering Science, 2013, 47(11):2046-2050.
[9] GUO W, LI M L, DONG S R. Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier[C]//2009 IEEE 16th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Suzhou:IEEE, 2009:336-338.
[10] DU X Y, DONG S R, HAN Y, et al. Analysis of metal routing technique in a novel dual direction multi-finger SCR ESD protection device[C]//2008 IEEE 9th International Conference on Solid-State and Integrated Circuit Technology. Beijing:IEEE, 2008:337-340.
[11] LEE J C, YOUNG R, LIOU J J, et al. An improved transmission line pulsing (TLP) setup for electrostatic discharge (ESD) testing in semiconductor devices and ICs[C]//2001 IEEE International Conference on Microelectronic Test Structures. Kobe:IEEE, 2001:233-238.
[12] WANG Y, LU G Y, ZHANG L Z, et al. Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices[C]//2014 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. Marina Bay Sands, Singapore:IEEE, 2014:304-307.

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