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J4  2011, Vol. 45 Issue (11): 2050-2054    DOI: 10.3785/j.issn.1008-973X.2011.11.027
材料工程、化学工程     
Mg质量分数及缓冲层对ZnMgO∶Ga薄膜性能的影响
袁伟,朱丽萍,曹铃, 叶志镇
浙江大学 材料科学与工程学系, 硅材料国家重点实验室, 浙江 杭州 310027
Effect of Mg content and buffer layer on properties of
ZnMgO: Ga thin films
YUAN Wei, ZHU Li-ping, CAO Ling, YE Zhi-zhen
State Key laboratory for Silicon Materials, Department of Materials Science and Engineering, Zhejiang University,
Hangzhou 310027, China
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摘要:

为了解决氧化锌在柔性电子器件应用方面的问题,利用脉冲激光沉积法(PLD)在聚对苯二甲酸乙二醇酯(PET)柔性衬底上室温下制备镓掺杂氧化锌(ZnO∶Ga)和镓掺杂Zn1-xMgxO (Zn1-xMgxO∶Ga)透明导电薄膜,采用X射线衍射仪(XRD),扫描电镜,霍尔效应测试仪,紫外-可见光分光光度计对结构和性能进行表征,探讨靶材中镁质量分数对薄膜结构及光电性能的影响,并采用预沉积ZnO无机缓冲层法来改善薄膜样品的性能.研究结果表明,在柔性衬底上通过优化生长参数制备出性能良好的ZnO基透明导电薄膜,通过缓冲层的预沉积可以明显改善薄膜的结构和电学性能,薄膜电阻率最低可至8.27×10-4 Ω·cm,在可见光区平均透射率超过70%.

Abstract:

To solve the problem on ZnO applied in flexible optelectronic devices, transparent conducting ZnO: Ga and Zn1-xMgxO∶Ga films were deposited on flexible Polyethylene Terephthalate (PET) substrates by Pulsed Laser Deposition. XRD, SEM, Hall effect measurement, and UV-VIS-IR spectrophotometer were used to characterize the films, and the structural, electrical and optical properties of the films with different Mg concentration were studied. Then the method of buffer layer pre-deposition was used to improve the performance of the films. The results show that the ZnO-based transparent conducting thin films were obtained on flexible substrate by PLD method, and the structural, electrical properties of the films were obviously improved by buffer layer pre-deposition. The lowest electrical resistivity of the films we prepared is 8.27×10-4Ω·cm and the transmittance is more than 70% in the visible region.

出版日期: 2011-12-08
:  O 484  
基金资助:

国家自然科学基金资助项目(50772099); 教育部博士点基金资助项目(J20100007).

通讯作者: 朱丽萍(1966-),女,教授.     E-mail: zlp1@zju.edu.cn
作者简介: 袁伟(1984-),男,硕士生,从事宽带隙半导体薄膜方面研究.E-mail:lendice@zju.edu.cn
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引用本文:

袁伟,朱丽萍,曹铃, 叶志镇. Mg质量分数及缓冲层对ZnMgO∶Ga薄膜性能的影响[J]. J4, 2011, 45(11): 2050-2054.

YUAN Wei, ZHU Li-ping, CAO Ling, YE Zhi-zhen. Effect of Mg content and buffer layer on properties of
ZnMgO: Ga thin films. J4, 2011, 45(11): 2050-2054.

链接本文:

https://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2011.11.027        https://www.zjujournals.com/eng/CN/Y2011/V45/I11/2050

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