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ZJUS-A
Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering)  2000, Vol. 1 Issue (4): 427-430    DOI: 10.1631/jzus.2000.0427
Science & Engineering     
AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER
HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, ZHAO Bing-hui, WANG Lei, QUE Duan-lin
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027
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Abstract  An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with reflection high energy electron diffraction (RHEED) was introduced. The Si epilayers and SiGe strained-layers on three-inch Si (100) substrates were grown in this UHV/CVD system. The substrate temperature during growth was from 550°C to 780°C. The properties of epilayers were characterized by high-resolution cross-sectional transmission electron microscopy (TEM), double crystal X-ray diffraction (DCXRD), and spreading resistance (SPR). A B-doped SiGe epilayer with uniform resistivity distribution was grown.

Key words： UHV/CVD      silicon      germanium-silicon      epitaxy     
Received: 12 October 1999     
CLC:  TN304.055  
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YE Zhi-zhen
HUANG Jing-yun
LU Huan-ming
ZHAO Bing-hui
WANG Lei
QUE Duan-lin
Cite this article:

HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, ZHAO Bing-hui, WANG Lei, QUE Duan-lin. AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER. Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering), 2000, 1(4): 427-430.

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http://www.zjujournals.com/xueshu/zjus-a/10.1631/jzus.2000.0427     OR     http://www.zjujournals.com/xueshu/zjus-a/Y2000/V1/I4/427

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