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ZJUS-A
Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering)  2003, Vol. 4 Issue (2): 131-135    DOI: 10.1631/jzus.2003.0131
Chemistry & Biochemical Engineering     
Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE
SHEN Da-ke, SOU I. K., HAN Gao-rong, DU Pi-yi, QUE Duan-lin
State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027, China; Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
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Abstract  MBE growth of ZnSxSe1-x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270°C to 330°C. The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1-x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290°C. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1-x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.

Key words： MBE(molecular beam epitaxy)      Polycrystalline ZnSxSe1-x thin film      ITO glass      Structural characterizations     
Received: 01 March 2002     
CLC:  TN304  
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SHEN Da-ke
SOU I. K.
HAN Gao-rong
DU Pi-yi
QUE Duan-lin
Cite this article:

SHEN Da-ke, SOU I. K., HAN Gao-rong, DU Pi-yi, QUE Duan-lin. Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE. Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering), 2003, 4(2): 131-135.

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http://www.zjujournals.com/xueshu/zjus-a/10.1631/jzus.2003.0131     OR     http://www.zjujournals.com/xueshu/zjus-a/Y2003/V4/I2/131

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