| Electrical & Electronic Engineering |
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| A robust polysilicon-assisted SCR in ESD protection application |
| CUI Qiang, HAN Yan, DONG Shu-rong, LIOU Juin-jie |
| ESD Lab, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hangzhou 310027, China; Research Center for Embedded System, Zhejiang University, Hangzhou 310027, China; Department of Electrical and Computer Engineering, University of Central Florida, Orlando 32816, USA |
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Abstract A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC’s 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR’s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 μm2 layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
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Received: 28 September 2007
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