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工程设计学报
Chinese Journal of Engineering Design  2025, Vol. 32 Issue (3): 367-372    DOI: 10.3785/j.issn.1006-754X.2025.05.108
Reliability and Quality Design     
Failure analysis of insulation part for high-temperature electrical connector
Liqiang ZHONG(),Qibei LI,Hongjie GUO,Ping QIAN,Wenhua CHEN()
National and Local Joint Engineering Research Center for Reliability Analysis and Testing of Electromechanical Products, Zhejiang Sci-Tech University, Hangzhou 310018, China
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Abstract  

Insulating materials tend to age, crack and even carbonize in high-temperature environments, resulting in a decline of insulation performance of high-temperature electrical connector and failure to meet the working requirements of equipment. Taking the J58 high-temperature electrical connector of a certain equipment as the research subject, the failure mechanism of its polyimide (PI) insulation part was analyzed and verified.At the same time, the variation of its insulation performance was investigated through high-temperature deterioration test. The results showed that after the PI insulation part was continuously operated at 450 ℃ for 30 minutes, the insulation part showed carbonization trend, and its insulation resistance decreased significantly, but it was still greater than 5 GΩ, which could still meet the working requirements of a certain type of hypersonic missile.The research results provide a basis for the reliability design, selection and later maintenance decisions of high-temperature electrical connector, which is conducive to enhancing the reliability of equipment such as hypersonic missile.

Key words： high-temperature electrical connector      insulating performance      failure mechanism     
Received: 20 January 2025      Published: 02 July 2025
CLC:  TB 114  
Corresponding Authors: Wenhua CHEN     E-mail: zlq001@zstu.edu.cn;chenwh @zstu.edu.cn
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Liqiang ZHONG
Qibei LI
Hongjie GUO
Ping QIAN
Wenhua CHEN
Cite this article:

Liqiang ZHONG,Qibei LI,Hongjie GUO,Ping QIAN,Wenhua CHEN. Failure analysis of insulation part for high-temperature electrical connector. Chinese Journal of Engineering Design, 2025, 32(3): 367-372.

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https://www.zjujournals.com/gcsjxb/10.3785/j.issn.1006-754X.2025.05.108     OR     https://www.zjujournals.com/gcsjxb/Y2025/V32/I3/367


高温电连接器绝缘件失效分析

针对高温环境下绝缘材料易老化裂解乃至碳化，导致高温电连接器绝缘性能下降而不能满足型号装备工作要求的问题，以某型号装备用J58型高温电连接器为研究对象，分析并验证了其聚酰亚胺（polyimide, PI）绝缘件的失效机理。同时，通过高温劣化实验研究了其绝缘性能的变化情况。实验结果表明：PI绝缘件在450 ℃下持续工作30 min后出现了碳化趋势，其绝缘电阻显著下降，但大于5 GΩ，仍可满足某型高超导弹的工作要求。研究结果为高温电连接器的可靠性设计、选用及后期维护决策提供了依据，并有助于提升高超导弹等型号装备的可靠性。


关键词： 高温电连接器,  绝缘性能,  失效机理 
Fig.1 Schematic of structure of J58 high-temperature electrical connector
Fig.2 Appearance of insulation part
Fig.3 Molecular structure of homophenylene type PI
性能指标PIFX-502玻纤增强酚醛树脂聚醚醚酮
体积电阻/（Ω·m）101610121015～1016
耐电压/（kV/mm）251318~23
耐温（短时）/℃500400300
Table 1 Performance comparison of PI with FX-502 glass fiber reinforced phenolic resin and polyetheretherketone
Fig.4 Schematic diagram of PI cleavage reaction process
Fig.5 Schematic diagram of PI crosslinking reaction process
Fig.6 Insulating performance deterioration test platform for high-temperature electrical connector
Fig.7 Distribution of insulation resistance measuring points
序号实验前实验后变化值
1-1139.77.5132.2
1-2118.711.3107.4
1-3131.36.9124.4
1-4142.17.6134.5
1-5146.910.9136.0
1-6125.17.9117.2
2-1141.310.9130.4
2-2133.27.4125.8
2-3143.17.3135.8
2-4134.18.7125.4
2-5146.78.5138.2
2-6181.321.4159.9
3-1177.415.1162.3
3-2163.717.1146.6
3-3147.810.9136.9
3-4163.717.7146.0
3-5167.312.9154.4
3-6158.716.9141.8
4-1171.17.2163.9
4-2127.68.2119.4
4-3167.931.3136.6
4-4169.311.6157.7
4-5173.213.4159.8
4-6168.912.5156.4
Table 2 Insulation resistance of resistance measuring points before and after deterioration test
方差来源离差平方和自由度均方离差F值
组间差异2 260.893753.62944.473 308
组内差异3 369.4520168.4725
总计5 630.3423
Table 3 Variance analysis results of insulation resistance
Fig.8 Boxplot of insulation resistance before and after deterioration test
Fig.9 Appearance of insulation part after deterioration test
Fig.10 Micromorphology of insulation part surface before and after deterioration test
基团波峰/cm-1
酰亚胺基团C??O键1 720
酰亚胺基团C—N键1 380
C—H键3 100~2 900
C—O—C醚键1 100~1 000
Table 4 Infrared absorption peaks of PI characteristic groups
Fig.11 Infrared spectrum of PI
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