1. School of Microelectronic, Tianjin University, Tianjin 300072, China 2. School of Information Science and Engineering, Southeast University, Nanjing 211189, China
A new transmitter architecture was proposed to solve the high power consumption and low efficiency problems of the traditional transmitter in order to overcome the limitation of battery capacity and prolong the standby time of the chip. A two-stage ring oscillator based on injection locking technique was used to provide multiphase signal. The self-boosted charge pump circuit boosts the voltage of the multi-phase signal in order to achieve a low-voltage and low-power design. The edge combiner was used to multiply the frequency of the multiphase signal, which ensured that the pre-stage circuit can work at low frequency with low power consumption. The 433 MHz ISM transmitter was designed in a 55 nm CMOS technique for verification. The simulation results show that the output power is ?9.7 dBm. The ring oscillator and charge pump can work at a 0.6 V supply, and the edge combiner works under 1.2 V supply. The whole transmitter consumes 357.04 μW, the efficiency is 29.83%, and the layout occupies an area of 70 μm×100 μm. The simulation results show that the proposed structure has the advantages of low power consumption, high efficiency, small area and low complexity.
Meng-qian CUI,Pei-sheng ZONG,Guo WEI,Ke-ping WANG. Low-power and high-efficiency transmitter based on dual-supply voltage and frequency multiplication technique. Journal of ZheJiang University (Engineering Science), 2022, 56(7): 1294-1301.
Fig.2Low-power and high-efficiency transmitter architecture
Fig.3Injection-locked ring oscillator
Fig.4Output waves of ring oscillator
Fig.5Phase noise performance
Fig.6Structure of traditional charge pump
Fig.7Self-boosted voltage charge pump circuit
Fig.8Waveform of self-boosted voltage charge pump
Fig.9Status of MP3 during boost
Fig.10Edge combiner circuit
Fig.11Layout of proposed transmitter
Fig.12Injecting and output waveforms
Fig.13Spectrum of output waveform
Fig.14Start waveform
Fig.15Power distribution diagram
方法
工艺库
f/MHz
系统架构
S/mm2
VDD/V
调制方式
P/dBm
Pdis/μW
η/%
文献[5]方法
0.13 μm
400
延迟锁相环+边沿合成
2.5
1
FSK
?16
400
6.28
文献[8]方法
0.13 μm
400
注入锁定环形振荡器+ 边沿合成
0.04
1
FSK
?17
90
22
文献[9]方法
0.13 μm
915
模拟锁相环+功率放大器
0.29
1.2
FSK/OOK
?18.6
367/314
3.76/4.40
文献[11]方法
65 nm
915
注入锁定环形振荡器+ 功率放大器
0.038
0.8
8PSK/OPSK
?15
938
3.37
文献[12]方法
0.18 μm
315
谐波注入锁定+电容耦合倍频
0.455 7
0.8+0.2
OOK
?21.3
145
5.11
文献[13]方法
0.18 μm
432
双注入锁定环形振荡器+边沿合成
NA
1
16?QAM/MSK
?15
468
5.37
文献[14]方法
0.18 μm
400
双环形振荡器+边沿合成
0.06
0.8+0.2
BPSK
?15
330
9.58
文献[23]方法
65 nm
430/915
注入锁定环形振荡器+ 边沿合成
1.3
0.5
16?QAM/FSK
?10/?8.1
NA
15.9/23.7
文献[24]方法
0.18 μm
915
谐波注入锁定环形振荡器+边沿合成
0.041 3
NA
OOK
?14
200.9
19.82
文献[25]方法
22 nm
400
无源多相滤波器+ 边沿合成
0.03
0.4+0.2
BPSK
?17.5
67
27
本文方法
55 nm
433
注入锁定环形振荡器+ 边沿合成
0.007
0.6+1.2
FSK
?9.7
357
29.83
Tab.1Main performance comparison of low power transmitters
Fig.16Phase noise performance of frequency multiplied output
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