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浙江大学学报(工学版)
Journal of ZheJiang University (Engineering Science)  2022, Vol. 56 Issue (7): 1294-1301    DOI: 10.3785/j.issn.1008-973X.2022.07.004
    
Low-power and high-efficiency transmitter based on dual-supply voltage and frequency multiplication technique
Meng-qian CUI1(),Pei-sheng ZONG2,Guo WEI1,Ke-ping WANG1,*()
1. School of Microelectronic, Tianjin University, Tianjin 300072, China
2. School of Information Science and Engineering, Southeast University, Nanjing 211189, China
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Abstract  

A new transmitter architecture was proposed to solve the high power consumption and low efficiency problems of the traditional transmitter in order to overcome the limitation of battery capacity and prolong the standby time of the chip. A two-stage ring oscillator based on injection locking technique was used to provide multiphase signal. The self-boosted charge pump circuit boosts the voltage of the multi-phase signal in order to achieve a low-voltage and low-power design. The edge combiner was used to multiply the frequency of the multiphase signal, which ensured that the pre-stage circuit can work at low frequency with low power consumption. The 433 MHz ISM transmitter was designed in a 55 nm CMOS technique for verification. The simulation results show that the output power is ?9.7 dBm. The ring oscillator and charge pump can work at a 0.6 V supply, and the edge combiner works under 1.2 V supply. The whole transmitter consumes 357.04 μW, the efficiency is 29.83%, and the layout occupies an area of 70 μm×100 μm. The simulation results show that the proposed structure has the advantages of low power consumption, high efficiency, small area and low complexity.

Key words： transmitter      low power consumption      low voltage      self-boosted voltage      edge combining      injection-locking     
Received: 29 June 2021      Published: 26 July 2022
CLC:  TN 432  
Fund:  国家自然科学基金资助项目（61774035）；江苏省自然科学基金资助项目（BK20191260）
Corresponding Authors: Ke-ping WANG     E-mail: cmq_15028576218@sina.com;kpwang@tju.edu.cn
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Meng-qian CUI
Pei-sheng ZONG
Guo WEI
Ke-ping WANG
Cite this article:

Meng-qian CUI,Pei-sheng ZONG,Guo WEI,Ke-ping WANG. Low-power and high-efficiency transmitter based on dual-supply voltage and frequency multiplication technique. Journal of ZheJiang University (Engineering Science), 2022, 56(7): 1294-1301.

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https://www.zjujournals.com/eng/10.3785/j.issn.1008-973X.2022.07.004     OR     https://www.zjujournals.com/eng/Y2022/V56/I7/1294


基于双电压和倍频技术的低功耗高效率发射机

为了克服电池容量的局限性，延长芯片的待机时间，针对传统发射机的高功耗、低效率问题，提出新型发射机架构. 采用2级注入锁定环形振荡器提供多相信号，电荷泵自举升压电路对该多相信号进行电压提升，实现低电压低功耗设计. 边沿合成器对多相信号进行倍频，使前级电路工作在低频，降低系统功耗. 基于55 nm CMOS工艺，设计433 MHz ISM频段发射机进行验证. 仿真结果表明，发射机的输出功率为?9.7 dBm，环形振荡器和电荷泵自举升压电路工作在0.6 V电源电压下，边沿合成器工作在1.2 V电源电压下，发射机整体功耗为357.04 μW，效率为29.83%，版图面积为70 μm×100 μm. 实验结果证明，所提结构具有功耗低、效率高、面积小和复杂度低的优点.


关键词： 发射机,  低功耗,  低电压,  自举升压,  边沿合成,  注入锁定 
Fig.1 Transmitter architectures
Fig.2 Low-power and high-efficiency transmitter architecture
Fig.3 Injection-locked ring oscillator
Fig.4 Output waves of ring oscillator
Fig.5 Phase noise performance
Fig.6 Structure of traditional charge pump
Fig.7 Self-boosted voltage charge pump circuit
Fig.8 Waveform of self-boosted voltage charge pump
Fig.9 Status of MP3 during boost
Fig.10 Edge combiner circuit
Fig.11 Layout of proposed transmitter
Fig.12 Injecting and output waveforms
Fig.13 Spectrum of output waveform
Fig.14 Start waveform
Fig.15 Power distribution diagram
方法 工艺库 f/MHz 系统架构 S/mm2 VDD/V 调制方式 P/dBm Pdis/μW η/%
文献[5]方法 0.13 μm 400 延迟锁相环+边沿合成 2.5 1 FSK ?16 400 6.28
文献[8]方法 0.13 μm 400 注入锁定环形振荡器+
边沿合成 		0.04 1 FSK ?17 90 22
文献[9]方法 0.13 μm 915 模拟锁相环+功率放大器 0.29 1.2 FSK/OOK ?18.6 367/314 3.76/4.40
文献[11]方法 65 nm 915 注入锁定环形振荡器+
功率放大器 		0.038 0.8 8PSK/OPSK ?15 938 3.37
文献[12]方法 0.18 μm 315 谐波注入锁定+电容耦合倍频 0.455 7 0.8+0.2 OOK ?21.3 145 5.11
文献[13]方法 0.18 μm 432 双注入锁定环形振荡器+边沿合成 NA 1 16?QAM/MSK ?15 468 5.37
文献[14]方法 0.18 μm 400 双环形振荡器+边沿合成 0.06 0.8+0.2 BPSK ?15 330 9.58
文献[23]方法 65 nm 430/915 注入锁定环形振荡器+
边沿合成 		1.3 0.5 16?QAM/FSK ?10/?8.1 NA 15.9/23.7
文献[24]方法 0.18 μm 915 谐波注入锁定环形振荡器+边沿合成 0.041 3 NA OOK ?14 200.9 19.82
文献[25]方法 22 nm 400 无源多相滤波器+
边沿合成 		0.03 0.4+0.2 BPSK ?17.5 67 27
本文方法 55 nm 433 注入锁定环形振荡器+
边沿合成 		0.007 0.6+1.2 FSK ?9.7 357 29.83
Tab.1 Main performance comparison of low power transmitters
Fig.16 Phase noise performance of frequency multiplied output
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