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| Argon plasma induced quantum well intermixing technology |
| PENG Sheng-hua, ZHANG Xin, HE Jian-jun |
| State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China |
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Abstract Argon plasma induced quantum well intermixing was investigated for an InGaAsP/InP multi-quantum well structure. When the radio frequency (RF) power was fixed at 480 W, inductively coupled plasma （ICP） power at 500 W and ICP treatment time at 1 min, the etching depth of the quantum well samples was less than 500 nm, and the defects induced by the ICP were confined in the sacrificial layer. The samples were then annealed in nitrogen atmosphere for 2 min at different temperatures, and the defects diffused to the quantum well layers to induce quantum well intermixing. The photoluminescence (PL) of experimental samples showed that with the increasing ICP power and annealing temperature, the blueshift of the PL peaks of the quantum well samples increased and this trend saturated when the ICP power reached 500 W with the annealing temperature at 750 ℃. Under this condition, the blue shift of PL peak as large as 110 nm was obtained and the PL intensity was 55% of the as-grown sample, which indicates the intermixed quantum well samples are still in good crystal lattice quality.
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Published: 14 July 2011
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氩等离子体诱导量子阱混合技术
研究了基于InGaAsP/InP应变多量子阱片的氩等离子体诱导量子阱混合工艺方法.当等离子刻蚀机（ICP）的射频(RF）功率为480 W、ICP功率为500 W、处理时间为1 min时,ICP处理过程中氩（Ar）等离子体对量子阱片的刻蚀深度小于牺牲层的厚度500 nm,晶格缺陷将产生在牺牲层内.样品在纯氮气条件、不同温度下快速退火2 min,缺陷扩散至量子阱层诱发量子阱混合.不同实验条件的样品PL光谱表明：随着退火温度和ICP功率的增加,量子阱片的光致发光谱（PL）峰值波长会发生显著的蓝移,分别在750 ℃和500 W时趋于饱和；此时获得的蓝移为110 nm,PL强度为原生片的55%,量子阱层仍保持了较好的晶格特性.
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