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多晶硅栅对LDMOS-SCR器件ESD防护性能的影响 |
黄龙1, 梁海莲1, 顾晓峰1, 董树荣2, 毕秀文1, 魏志芬3 |
1.江南大学 轻工过程先进控制教育部重点实验室,江苏 无锡 214122;2.浙江大学 微电子与光电子研究所,浙江 杭州 310027;3.西安西电电力系统有限公司,陕西 西安 710077 |
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Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices |
HUANG Long1, LIANG Hai-lian1, GU Xiao-feng1, DONG Shu-rong2, BI Xiu-wen1, WEI Zhi-fen3 |
1. Key Laboratory of Advanced Process Control for Light Industry, Ministry of Education, Jiangnan University, Wuxi 214122, China; 2. Institute of Microelectronics and Optoelectronics, Zhejiang University, Hangzhou 310027, China; 3. Xi’an XD Power Systems Co., Ltd., Xi’an 710077, China |
引用本文:
黄龙, 梁海莲, 顾晓峰, 董树荣, 毕秀文, 魏志芬. 多晶硅栅对LDMOS-SCR器件ESD防护性能的影响[J]. 浙江大学学报(工学版), 10.3785/j.issn.1008-973X.2015.02.025.
HUANG Long, LIANG Hai-lian, GU Xiao-feng, DONG Shu-rong, BI Xiu-wen, WEI Zhi-fen. Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices. JOURNAL OF ZHEJIANG UNIVERSITY (ENGINEERING SCIENCE), 10.3785/j.issn.1008-973X.2015.02.025.
链接本文:
http://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2015.02.025
或
http://www.zjujournals.com/eng/CN/Y2015/V49/I2/366
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