Influences of deposition temperature and rate on mechanical stress of electron beam deposited ZnSe thin films
RAO Wen-ping1,2, WANG Ying1, ZHANG Yue-guang1, LIU Xu1
(1. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China;
2. Yunnan Vocational College of National Defense Industry, Kunming 650222, China)
The stress and microstructure characteristics of zinc selenide (ZnSe) single layer deposited by electron beam evaporation at various substrate temperatures and deposition rates were investigated. The ZYGO GPI interferometer and X-ray diffractometer were employed to measure the stress and orientation features of the samples, respectively. The experimental results demonstrate that the ZnSe thin films prepared under different conditions present compressive stress. The mechanical stress is maximum at substrate temperature of 200 ℃, then the stress decreases as the temperature increases above 200 ℃. The X-ray spectroscopy reveals that the evolution of stress with deposition rate attributes to the changes of microstructure. The lowest stress was obtained at the deposition rate of 1.5 nm/s．
RAO Wen-Ping, WANG Ying, ZHANG Yue-Guang, et al. Influences of deposition temperature and rate on mechanical stress of electron beam deposited ZnSe thin films. J4, 2009, 43(11): 2059-2061.
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