Please wait a minute...
浙江大学学报(工学版)  2018, Vol. 52 Issue (9): 1788-1795    DOI: 10.3785/j.issn.1008-973X.2018.09.020
电子通信技术     
126.6~128.1 GHz基波压控振荡器设计
苏国东1,2, 孙玲玲2, 王翔2, 王尊峰3, 张胜洲3, 雷宇超2
1. 浙江大学 电气工程学院超大规模集成电路设计研究所, 浙江 杭州 310027;
2. 杭州电子科技大学 教育部射频电路与系统重点实验室, 浙江 杭州 310018;
3. 中国电子科技集团公司第41研究所, 山东 青岛 255666
Design of 126.6-128.1 GHz fundamental voltage control oscillator
SU Guo-dong1,2, SUN Ling-ling2, WANG Xiang2, WANG Zun-feng3, ZHANG Sheng-zhou3, LEI Yu-chao2
1. Institute of VLSI, College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
2. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;
3. The 41 st Institute of China Electronics Technology Group Corporation, Qingdao 266555, China
 全文: PDF(1399 KB)   HTML
摘要:

采用65 nm CMOS工艺,设计一款基波压控振荡器(VCO).采用负阻单元的寄生电容与用户自定义电感形成VCO的电感-电容(LC)谐振网络.采用交叉耦合对管作为VCO的负阻单元,维持VCO的稳定输出信号.通过控制尾电流管的偏置电压大小调节交叉耦合管的寄生电容,从而实现输出频率的调谐.VCO输出缓冲器(buffer)采用共源-共栅(Cascode)结构以减小负载电阻对电路振荡的影响.所设计的片上变压器实现了差分信号转单端信号功能,并与传输线、地-信号-地(GSG)焊盘实现了VCO输出匹配.测试结果表明,电路的输出频率范围为126.6~128.1 GHz,调谐范围为1.5 GHz.当电路工作频率为127.2 GHz时,输出功率为-26.8 dBm,偏频为1 MHz处相位噪声的仿真值为-86.3 dBc/Hz.该电路的芯片面积为405 μm×440 μm.

Abstract:

A fundamental voltage control oscillator (VCO) was designed by 65 nm CMOS process. The parasitic capacitor of negative impedance cell and consumer-designed inductor constitute the LC tank of the proposed VCO. The cross-couple MOSFETs were designed as the negative impedance cell to sustain the steady output signal of VCO. The frequency of the output signal was tuned by changing the bias voltage which was added at the rail current MOSFET of the cross-couple MOSFETs. The cascode amplifier was employed as the buffer of VCO to alleviate the effect of load resistance. In addition, the on-chip transformer with the structure of floating metal bar was designed to realize the transformation between the differential signal and single-ended signal. The transformer, the consumer-designed transmission-line and the designed GSG PAD realize the matching of the VCO output. The measure results show that the output frequency of this VCO ranges from 126.6 GHz to 128.1 GHz, the tune range is 1.5 GHz, and the output power is -26.8 dBm at the frequency of 127.2 GHz. The post-simulation shows that the phase noise at 1 MHz offset from 127.2 GHz is -86.3 dBc/Hz. The area of this VCO is 405×440 μm2.

收稿日期: 2017-08-29 出版日期: 2018-09-20
CLC:  TN752  
基金资助:

国家自然科学基金资助项目(61331006);浙江省自然科学基金青年资助项目(LQ15F010005)

通讯作者: 孙玲玲,女,教授.orcid.org/0000-0002-6410-1471.     E-mail: 孙玲玲,女,教授.orcid.org/0000-0002-6410-1471.E-mail:sunll@hdu.edu.cn
作者简介: 苏国东(1984-),男,博士生,从事毫米波集成电路及系统研究与设计.orcid.org/0000-0001-6927-9183.E-mail:guodong0415@163.com
服务  
把本文推荐给朋友
加入引用管理器
E-mail Alert
作者相关文章  

引用本文:

苏国东, 孙玲玲, 王翔, 王尊峰, 张胜洲, 雷宇超. 126.6~128.1 GHz基波压控振荡器设计[J]. 浙江大学学报(工学版), 2018, 52(9): 1788-1795.

SU Guo-dong, SUN Ling-ling, WANG Xiang, WANG Zun-feng, ZHANG Sheng-zhou, LEI Yu-chao. Design of 126.6-128.1 GHz fundamental voltage control oscillator. JOURNAL OF ZHEJIANG UNIVERSITY (ENGINEERING SCIENCE), 2018, 52(9): 1788-1795.

链接本文:

http://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2018.09.020        http://www.zjujournals.com/eng/CN/Y2018/V52/I9/1788

[1] XU Z W, GU Q J, WU Y C, et al. D-band CMOS transmitter and receiver for multi-giga bit/sec wireless data link[C]//IEEE Custom Integrated Circuits Conference (CICC). San Jose:IEEE, 2010:1-4.
[2] DEFERM N, REYNAERT P R. A 120 GHz fully integrated 10 Gb/s short-range star-QAM wireless transmitter with on-chip bond wire antenna in 45 nm low power CMOS[J]. IEEE Journal of Solid-State Circuits (JSSC), 2014, 49(7):1606-1616.
[3] MOSTAJERAN A, CATHELIN A, AFSHARI E,. A 170 GHz fully integrated single-chip FMCW imaging radar with 3D imaging capability[J]. IEEE Journal of Solid-State Circuits (JSSC), 2017, 52(10):2721-2734.
[4] SENGUPTA K, HAJIMIRI A. Sub-THz beam-forming using near-field coupling of distributed active radiator arrays[C]//IEEE Radio Frequency Integrated Circuits Symposium (RFIC). Baltimore:IEEE, 2011:1-4.
[5] WANG Z, CHIANG P Y, NAZARI P, et al. A CMOS 210-GHz fundamental transceiver with OOK modulation[J]. IEEE Journal of Solid-State Circuits (JSSC), 2014, 49(3):564-580.
[6] ZHANG J, SHARMA N, CHOI W, et al. 85-to-127 GHz CMOS signal generation using a quadrature VCO with passive coupling and broadband harmonic combining for rotational spectroscopy[J]. IEEE Journal of Solid-State Circuits (JSSC), 2015, 50(6):1361-1371.
[7] HOLISAZ H, SAFAVI-NAEINI S. A low noise D-band VCO with a wide bandwidth and a steady output power[J]. IEEE Microwave and Wireless Components Letters (MWCL), 2015, 25(11):742-744.
[8] SHANG Y, YU H, LINAG Y, et al. Millimeter-wave sources at 60 and 140 GHz by magnetic plasmon waveguide based in phase coupled oscillator network in 65-nm CMOS[J]. IEEE Transactions on Microwave Theory and Techniques (TMTT), 2016, 64(5):1560-1571.
[9] HUANG P C, TSAI M D, VENDELIN G D, et al. A low-power 114-GHz push-push CMOS VCO using LC source degeneration[J]. IEEE Journal of Solid-State Circuits (JSSC), 2007, 42(6):1230-1239.
[10] VOLKAERTS W, STEYAERT M, REYNAERT P. 118 GHz fundamental VCO with 7.8% tuning range in 65 nm CMOS[C]//IEEE Radio Frequency Integrated Circuits Symposium (RFIC). Baltimore:IEEE, 2011:1-4.
[11] ADNAN M, AFSHARI E. A 105-GHz VCO with 9.5% tuning range and 2.8-mW peak output power in a 65-nm bulk CMOS process[J]. IEEE Transactions on Microwave Theory and Techniques (TMTT), 2014, 62(4):753-762.
[12] LIU J, YU Z P, SUN L L. A broadband model over 1-220 GHz for GSG pad structures in RF CMOS[J]. IEEE Electron Device Letters (EDL), 2014, 35(7):696-698.
[13] LEESON D. A simple model of feedback oscillator noise spectrum[J]. Proceedings of IEEE, 1996, 54:329-330.

No related articles found!