Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod

doi:10.1631/jzus.A1500213

Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering)

2016, Vol. 17

Issue (1): 37-44 DOI: 10.1631/jzus.A1500213

Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod

Chun-li Zhang^1,^3,⁴,Xiao-yuan Wang¹,Wei-qiu Chen^1,^3,⁴,Jia-shi Yang^1,^2,†(

)

¹ Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, China
² Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0526, USA
³ Soft Matter Research Center, Zhejiang University, Hangzhou 310027, China
⁴ Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Hangzhou 310027, China

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Abstract

We made a theoretical study of the carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod of crystals of class 6 mm. Simple analytical expressions for the carrier distribution, electric potential, electric field, electric displacement, mechanical displacement, stress, and strain were obtained from a 1D nonlinear model reduced from the 3D equations for piezoelectric semiconductors. The distribution and fields were found to be either symmetric or antisymmetric about the center of the rod. They are qualitatively the same for electrons and holes. Numerical calculations show that the carrier distribution and the fields are relatively strong near the ends of the rod than in its central part. They are sensitive to the value of the carrier density near the ends of the rod.

Key words： Piezoelectricity Semiconductor Rod Carrier distribution

Received: 27 July 2015 Published: 06 January 2016

Fund: National Natural Science Foundation of China(No. 11202182, 11272281, 11321202)

Corresponding Authors: Jia-shi Yang E-mail: jyang1@unl.edu

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Cite this article:

Chun-li Zhang,Xiao-yuan Wang,Wei-qiu Chen,Jia-shi Yang. Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod. Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering), 2016, 17(1): 37-44.

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http://www.zjujournals.com/xueshu/zjus-a/10.1631/jzus.A1500213 OR http://www.zjujournals.com/xueshu/zjus-a/Y2016/V17/I1/37

Fig. 1 A piezoelectric semiconductor rod of crystals of class 6 mm

Fig. 2 Roots of Eq. (31): n₀=10¹² m⁻³, Y=±0.603X; n₀= 10¹⁴ m⁻³, Y=±0.0603X

Fig. 3 Carrier distribution along the rod

Fig. 4 Axial distributions of the electric field E₃ (a), electric potential φ (b), and electric displacement D₃ (c)

Fig. 5 Axial strain (a) and axial displacement (b)


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