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Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering)  2015, Vol. 16 Issue (4): 326-334    DOI: 10.1631/jzus.A1500030
Optical Engineering     
SESAM fabrication errors and its influence on ultrafast laser cavity design
Sha Wang, Guo-ying Feng, Shou-huan Zhou
Institute of Laser & Micro/Nano Engineering, College of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China; North China Research Institute of Electro-Optics, Beijing 100015, China
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Abstract  During mode-locked ultrafast laser experiments, we find that semiconductor saturable absorber mirrors (SESAMs) from the same manufacturing process may, from batch to batch, show different working ranges: pure Q-switching, Q-switched mode-locking, and continuous wave (CW) mode-locking. This is because, in high-volume wafer-scale fabrication, there is typically an estimated 1% error for high-quality molecular beam epitaxy (MBE) growth, which introduces a variation in the parameters of an individual SESAM. In this paper, we will analyze how that 1% error in layer thickness influences the behaviour of SESAMs in three different structures: resonant SESAM, anti-resonant SESAM, and enhanced SESAM. Furthermore, the characteristics of the SESAM will affect the mode-locking dynamic behavior of ultrafast solid state lasers. In the worst case, a SESAM with a fabrication error may prevent the laser cavity from mode-locking. Proper laser cavity design can help to reduce the impact of SESAM fabrication errors on laser performance and maintain the laser in the CW mode-locking range.

Key wordsSemiconductor saturable absorber mirror (SESAM)      Ultrafast laser      Fabrication error      Design criteria     
Received: 15 February 2015      Published: 03 April 2015
CLC:  TN248.1  
Cite this article:

Sha Wang, Guo-ying Feng, Shou-huan Zhou. SESAM fabrication errors and its influence on ultrafast laser cavity design. Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering), 2015, 16(4): 326-334.

URL:

http://www.zjujournals.com/xueshu/zjus-a/10.1631/jzus.A1500030     OR     http://www.zjujournals.com/xueshu/zjus-a/Y2015/V16/I4/326

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