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Front. Inform. Technol. Electron. Eng.  2013, Vol. 14 Issue (4): 288-295    DOI: 10.1631/jzus.C1200369
    
Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology
Ge-liang Yang, Zhi-gong Wang, Zhi-qun Li, Qin Li, Fa-en Liu, Zhu Li
Engineering Research Center of RF-ICs and RF-Systems, Ministry of Education, Southeast University, Nanjing 210096, China
Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology
Ge-liang Yang, Zhi-gong Wang, Zhi-qun Li, Qin Li, Fa-en Liu, Zhu Li
Engineering Research Center of RF-ICs and RF-Systems, Ministry of Education, Southeast University, Nanjing 210096, China
 全文: PDF 
摘要： A Ka-band sub-harmonically pumped resistive mixer (SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance (balun) with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation (LO) signal from single to differential mode. The results showed that the SHPRM achieves the conversion gain of ?15–?12.5 dB at fixed fIF=0.5 GHz with 8 dBm LO input power for the radio frequency (RF) bandwidth of 28–35 GHz. The in-band LO-intermediate freqency (IF), RF-IF, and LO-RF isolations are better than 31, 34, and 36 dB, respectively. Besides, the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB, respectively. The measured input referred P1dB and 3rd-order inter-modulation intercept point (IIP3) are 0.5 and 10.5 dBm, respectively. The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm2 including pads.
关键词： Complementary metal-oxide-semiconductor (CMOS);  Sub-harmonically pumped resistive mixer (SHPRM);  Marchand balance-to-unbalance (balun);  Millimeter wave (MMW);  Monolithic microwave integrated circuit (MMIC)    
Abstract: A Ka-band sub-harmonically pumped resistive mixer (SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance (balun) with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation (LO) signal from single to differential mode. The results showed that the SHPRM achieves the conversion gain of ?15–?12.5 dB at fixed fIF=0.5 GHz with 8 dBm LO input power for the radio frequency (RF) bandwidth of 28–35 GHz. The in-band LO-intermediate freqency (IF), RF-IF, and LO-RF isolations are better than 31, 34, and 36 dB, respectively. Besides, the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB, respectively. The measured input referred P1dB and 3rd-order inter-modulation intercept point (IIP3) are 0.5 and 10.5 dBm, respectively. The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm2 including pads.
Key words: Complementary metal-oxide-semiconductor (CMOS)    Sub-harmonically pumped resistive mixer (SHPRM)    Marchand balance-to-unbalance (balun)    Millimeter wave (MMW)    Monolithic microwave integrated circuit (MMIC)
收稿日期: 2012-12-22 出版日期: 2013-04-03
CLC:  TN4  
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Ge-liang Yang
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Qin Li
Fa-en Liu
Zhu Li

引用本文:

Ge-liang Yang, Zhi-gong Wang, Zhi-qun Li, Qin Li, Fa-en Liu, Zhu Li. Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology. Front. Inform. Technol. Electron. Eng., 2013, 14(4): 288-295.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C1200369    或    http://www.zjujournals.com/xueshu/fitee/CN/Y2013/V14/I4/288

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