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Front. Inform. Technol. Electron. Eng.  2012, Vol. 13 Issue (12): 937-943    DOI: 10.1631/jzus.C1200112
    
A low drift current reference based on PMOS temperature correction technology
Yi-die Ye, Le-nian He, Ya-dan Shen
Institute of Very Large Scale Integrated Circuits Design, Zhejiang University, Hangzhou 310027, China
A low drift current reference based on PMOS temperature correction technology
Yi-die Ye, Le-nian He, Ya-dan Shen
Institute of Very Large Scale Integrated Circuits Design, Zhejiang University, Hangzhou 310027, China
 全文: PDF 
摘要： A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10?6/°C over the temperature range of ?40–120 °C under the typical condition.
关键词： Current reference;  Cross structure;  PMOS cascode;  Temperature coefficient;  Low drift    
Abstract: A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10?6/°C over the temperature range of ?40–120 °C under the typical condition.
Key words: Current reference    Cross structure    PMOS cascode    Temperature coefficient    Low drift
收稿日期: 2012-04-15 出版日期: 2012-12-09
CLC:  TN432  
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Yi-die Ye
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Yi-die Ye, Le-nian He, Ya-dan Shen. A low drift current reference based on PMOS temperature correction technology. Front. Inform. Technol. Electron. Eng., 2012, 13(12): 937-943.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C1200112    或    http://www.zjujournals.com/xueshu/fitee/CN/Y2012/V13/I12/937

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