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Front. Inform. Technol. Electron. Eng.  2011, Vol. 12 Issue (6): 486-498    DOI: 10.1631/jzus.C1000239
    
A 20 μW 95 dB dynamic range 4th-order Delta-Sigma modulator with novel power efficient operational transconductance amplifier and resonator
Jian Xu, Xiao-bo Wu*, Meng-lian Zhao, Jun-yi Shen
Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China
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Abstract  A low power high performance Delta-Sigma modulator for portable measurement applications is presented. To reduce power consumption while maintaining high performance, a fully feedforward architecture with a comprehensive system-level design is implemented. As a key building block, a novel power efficient current mirror operational transconductance amplifier (OTA) with a fast-settling less-error switched-capacitor common-mode feedback (SC CMFB) circuit is introduced, and the effects of both gain nonlinearity and 1/f noise of OTA are discussed. A new method to determine the voltage gain of an OTA is also proposed. The bottom terminal parasitic effect of poly-insulator-poly (PIP) capacitors is considered. About an extra 20% of capacitance is added to the total capacitance load. A power and area efficient resonator is adopted to realize a coefficient of 1/90 for 50% power and 75% area reduction compared with conventional designs. The chip is implemented in a low cost 0.35 μm complementary metal oxide semiconductor (CMOS) process. The total power consumption is 20 μW with a 1.5 V supply, and the measured dynamic range (DR) is 95 dB over a 1 kHz bandwidth. Experimental results show that a high figure-of-merit (FOM) is achieved for the designed modulator in comparison with those from the literature.

Key wordsLow power      High performance      Power efficient OTA and resonator      Delta-Sigma modulator     
Received: 05 July 2010      Published: 07 June 2011
CLC:  TN4  
Cite this article:

Jian Xu, Xiao-bo Wu, Meng-lian Zhao, Jun-yi Shen. A 20 μW 95 dB dynamic range 4th-order Delta-Sigma modulator with novel power efficient operational transconductance amplifier and resonator. Front. Inform. Technol. Electron. Eng., 2011, 12(6): 486-498.

URL:

http://www.zjujournals.com/xueshu/fitee/10.1631/jzus.C1000239     OR     http://www.zjujournals.com/xueshu/fitee/Y2011/V12/I6/486


A 20 μW 95 dB dynamic range 4th-order Delta-Sigma modulator with novel power efficient operational transconductance amplifier and resonator

A low power high performance Delta-Sigma modulator for portable measurement applications is presented. To reduce power consumption while maintaining high performance, a fully feedforward architecture with a comprehensive system-level design is implemented. As a key building block, a novel power efficient current mirror operational transconductance amplifier (OTA) with a fast-settling less-error switched-capacitor common-mode feedback (SC CMFB) circuit is introduced, and the effects of both gain nonlinearity and 1/f noise of OTA are discussed. A new method to determine the voltage gain of an OTA is also proposed. The bottom terminal parasitic effect of poly-insulator-poly (PIP) capacitors is considered. About an extra 20% of capacitance is added to the total capacitance load. A power and area efficient resonator is adopted to realize a coefficient of 1/90 for 50% power and 75% area reduction compared with conventional designs. The chip is implemented in a low cost 0.35 μm complementary metal oxide semiconductor (CMOS) process. The total power consumption is 20 μW with a 1.5 V supply, and the measured dynamic range (DR) is 95 dB over a 1 kHz bandwidth. Experimental results show that a high figure-of-merit (FOM) is achieved for the designed modulator in comparison with those from the literature.

关键词: Low power,  High performance,  Power efficient OTA and resonator,  Delta-Sigma modulator 
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