Voltage reference,Bandgap,Temperature compensation,Low drift,Resistive trimming," /> A low drift curvature-compensated bandgap reference with trimming resistive circuit" /> A low drift curvature-compensated bandgap reference with trimming resistive circuit" /> Voltage reference,Bandgap,Temperature compensation,Low drift,Resistive trimming,"/> <span style="font-size:13.3333px;">A low drift curvature-compensated bandgap reference with trimming resistive circuit</span>
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Front. Inform. Technol. Electron. Eng.  2011, Vol. 12 Issue (8): 698-706    DOI: 10.1631/jzus.C1000440
    
A low drift curvature-compensated bandgap reference with trimming resistive circuit
Zhi-hua Ning*, Le-nian He
Institute of Very Large Scale Integrated Circuits, Zhejiang University, Hangzhou 310027, China
A low drift curvature-compensated bandgap reference with trimming resistive circuit
Zhi-hua Ning*, Le-nian He
Institute of Very Large Scale Integrated Circuits, Zhejiang University, Hangzhou 310027, China
 全文: PDF(439 KB)  
摘要： A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference’s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO). The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.35-μm CMOS process, and the temperature coefficient (TC) was measured to be only 2.1×10?6/°C over the temperature range of ?40–125 °C after trimming. The power supply rejection (PSR) was ?100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.
关键词： Voltage reference')" href="#">Voltage reference;  Bandgap;  Temperature compensation;  Low drift;  Resistive trimming    
Abstract: A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference’s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO). The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.35-μm CMOS process, and the temperature coefficient (TC) was measured to be only 2.1×10?6/°C over the temperature range of ?40–125 °C after trimming. The power supply rejection (PSR) was ?100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.
Key words: Voltage reference    Bandgap    Temperature compensation    Low drift    Resistive trimming
收稿日期: 2010-12-22 出版日期: 2011-08-03
CLC:  TN432  
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Zhi-hua Ning
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引用本文:

Zhi-hua Ning, Le-nian He. A low drift curvature-compensated bandgap reference with trimming resistive circuit. Front. Inform. Technol. Electron. Eng., 2011, 12(8): 698-706.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C1000440    或    http://www.zjujournals.com/xueshu/fitee/CN/Y2011/V12/I8/698

[1] Yi-die Ye, Le-nian He, Ya-dan Shen. A low drift current reference based on PMOS temperature correction technology[J]. Front. Inform. Technol. Electron. Eng., 2012, 13(12): 937-943.