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工程设计学报
Chin J Eng Design  2023, Vol. 30 Issue (2): 182-188    DOI: 10.3785/j.issn.1006-754X.2023.00.018
Optimization Design     
Optimization design and implementation of atomization assisted CVD cavity
Junliang FAN(),Li XIAO(),Yueting LUO,Gang CHEN,Xiaolin QU,Yi TANG,Hengxiang GONG
College of Science, Chongqing University of Technology, Chongqing 400054, China
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Abstract  

In order to realize the customization, reusability and economy of atomization assisted CVD (chemical vapor deposition) cavity, and meet the actual requirements of high-quality single crystal Ga2O3 thin film preparation, a new atomization assisted CVD cavity was designed and developed. The cavity was mainly composed of reaction chamber module, cooling module and buffer chamber module. Ga2O3 thin films were prepared by using a new cavity and a conventional cavity, and then the X-ray diffraction (XRD) patterns analysis and its surface morphology observation by atomic force microscope (AFM) were carried out. The experimental results showed that the new cavity could produce better performance α-Ga2O3 and β-Ga2O3 thin film; the half-peak widths of (006) crystal plane of the α-Ga2O3 thin films prepared by the new cavity and the conventional cavity were 0.172° and 0.272°, respectively, and the surface roughness was 25.6 nm and 26.8 nm, respectively. It could be seen that the α-Ga2O3 thin film made with the new cavity had better crystallinity, surface smoothness and density. Through the design of the new cavity, a stable environment conducive to the growth of single crystal Ga2O3 thin film was constructed, which provided a reliable path for the optimization of the preparation process of Ga2O3 thin film. The research results provide a reference for the preparation of high-quality metal oxide semiconductor films.

Key words： atomization assisted CVD (chemical vapor deposition)      new cavity      single crystal Ga2O3 thin film      process optimization     
Received: 16 May 2022      Published: 06 May 2023
CLC:  TH 69  
Corresponding Authors: Li XIAO     E-mail: fanjunliang@stu.cqut.edu.cn;xiaoli@cqut.edu.cn
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Junliang FAN
Li XIAO
Yueting LUO
Gang CHEN
Xiaolin QU
Yi TANG
Hengxiang GONG
Cite this article:

Junliang FAN,Li XIAO,Yueting LUO,Gang CHEN,Xiaolin QU,Yi TANG,Hengxiang GONG. Optimization design and implementation of atomization assisted CVD cavity. Chin J Eng Design, 2023, 30(2): 182-188.

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https://www.zjujournals.com/gcsjxb/10.3785/j.issn.1006-754X.2023.00.018     OR     https://www.zjujournals.com/gcsjxb/Y2023/V30/I2/182


雾化辅助CVD腔体的优化设计与实现

为了实现雾化辅助CVD（chemical vapor deposition，化学气相沉积）腔体的可定制性、可复用性及经济性，并满足高质量单晶氧化镓（Ga2O3）薄膜制备的实际需求，设计开发了一种新型雾化辅助CVD腔体。该腔体主要由反应腔室模块、冷却模块和缓冲腔室模块组成。采用新型腔体和常规腔体进行了单晶Ga2O3薄膜制备实验，对Ga2O3薄膜进行了X射线衍射（X-ray diffraction，XRD）图谱分析，并采用原子力显微镜（atomic force microscope，AFM）观察其表面形貌。实验结果表明：采用新型腔体可制备出性能更优的α-Ga2O3、β-Ga2O3薄膜；采用新型腔体和常规腔体制备的α-Ga2O3薄膜的（006）晶面的半峰宽分别为0.172°、0.272°，表面粗糙度分别为25.6 nm和26.8 nm，可见采用新型腔体制备的α-Ga2O3具有更优的结晶度、表面平整性和致密度。通过新型腔体的设计，构建了更有利于单晶Ga2O3薄膜生长的稳定环境，为Ga2O3薄膜制备工艺的优化提供了可靠路径。研究结果为制备高品质金属氧化物半导体薄膜提供了参考。


关键词： 雾化辅助化学气相沉积,  新型腔体,  单晶Ga2O3薄膜,  工艺优化 
Fig.1 Schematic diagram of new atomization auxiliary CVD cavity
Fig.2 Structure of new atomization assisted CVD cavity
Fig.3 Fog cone morphology of precursor aerosol
Fig.4 Structure of temperature-controlled heating table
Fig.5 Physical object of atomization assisted CVD cavity
Fig.6 Preparation process of metallic oxide thin film
Fig.7 XRD patterns of Ga2O3 thin film
Fig.8 AFM surface morphology of α-Ga2O3 thin film
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