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| Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts |
| ZHAO Yue, LI Dong-sheng, XING Shou-xiang, YANG De-ren, JIANG Min-hua |
| State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China; Clean Energy and Environment Engineering Key Laboratory of Ministry of Education, Zhejiang University, Hangzhou 310027, China; State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China |
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Abstract This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology.
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Received: 15 July 2005
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