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ZJUS-A
Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering)  2004, Vol. 5 Issue (2): 212-217    DOI: 10.1631/jzus.2004.0212
Chemical & Material Science     
ZnS0.8Se0.2 film for high resolution liquid crystal light valve
SHEN Da-ke, HAN Gao-rong, DU Pi-yi, QUE Duan-lin, SOU I.K.
State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027, China; Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
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Abstract  The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS0.8Se0.2 thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. The X-ray diffraction (XRD) results indicated that high quality polycrystalline ZnS0.8Se0.2 thin film grown at the optimized temperature had a preferred orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order of a few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS0.8Se0.2 photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve (LCLV) with high resolution feasible.

Key words： UV LCLV      Transmission mode      Polycrystalline ZnS0.8Se0.2 thin film      MBE     
Received: 21 August 2002     
CLC:  TN204  
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DU Pi-yi
QUE Duan-lin
SHEN Da-ke
HAN Gao-rong
SOU I.K.
Cite this article:

SHEN Da-ke, HAN Gao-rong, DU Pi-yi, QUE Duan-lin, SOU I.K.. ZnS0.8Se0.2 film for high resolution liquid crystal light valve. Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering), 2004, 5(2): 212-217.

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http://www.zjujournals.com/xueshu/zjus-a/10.1631/jzus.2004.0212     OR     http://www.zjujournals.com/xueshu/zjus-a/Y2004/V5/I2/212

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