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Front. Inform. Technol. Electron. Eng.  2013, Vol. 14 Issue (4): 279-282    DOI: 10.1631/jzus.C12MNT07
    
High Q, high frequency, high overtone bulk acoustic resonator with ZnO films
Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang
State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
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Abstract  Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor (Q) at GHz. This paper describes a high overtone bulk acoustic resonator (HBAR) based on Al/ZnO/Al sandwich layers and c-axis sapphire substrate. ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high Q at the multiple resonances from a 0.5–4.0 GHz wide band with a total size (including the contact pads) of 0.6 mm×0.3 mm×0.4 mm. The device exhibits the best acoustic coupling at around 2.4 GHz, which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates Q values of 30 000, 25 000, and 6500 at 1.49, 2.43, and 3.40 GHz, respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.

Key wordsBulk acoustic wave resonator      Quality factor (Q)      ZnO film      Mason’s model     
Received: 27 September 2012      Published: 03 April 2013
CLC:  TN751  
Cite this article:

Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang. High Q, high frequency, high overtone bulk acoustic resonator with ZnO films. Front. Inform. Technol. Electron. Eng., 2013, 14(4): 279-282.

URL:

http://www.zjujournals.com/xueshu/fitee/10.1631/jzus.C12MNT07     OR     http://www.zjujournals.com/xueshu/fitee/Y2013/V14/I4/279


High Q, high frequency, high overtone bulk acoustic resonator with ZnO films

Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor (Q) at GHz. This paper describes a high overtone bulk acoustic resonator (HBAR) based on Al/ZnO/Al sandwich layers and c-axis sapphire substrate. ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high Q at the multiple resonances from a 0.5–4.0 GHz wide band with a total size (including the contact pads) of 0.6 mm×0.3 mm×0.4 mm. The device exhibits the best acoustic coupling at around 2.4 GHz, which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates Q values of 30 000, 25 000, and 6500 at 1.49, 2.43, and 3.40 GHz, respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.

关键词: Bulk acoustic wave resonator,  Quality factor (Q),  ZnO film,  Mason’s model 
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