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Front. Inform. Technol. Electron. Eng.  2012, Vol. 13 Issue (12): 937-943    DOI: 10.1631/jzus.C1200112
    
A low drift current reference based on PMOS temperature correction technology
Yi-die Ye, Le-nian He, Ya-dan Shen
Institute of Very Large Scale Integrated Circuits Design, Zhejiang University, Hangzhou 310027, China
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Abstract  A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10?6/°C over the temperature range of ?40–120 °C under the typical condition.

Key wordsCurrent reference      Cross structure      PMOS cascode      Temperature coefficient      Low drift     
Received: 15 April 2012      Published: 09 December 2012
CLC:  TN432  
Cite this article:

Yi-die Ye, Le-nian He, Ya-dan Shen. A low drift current reference based on PMOS temperature correction technology. Front. Inform. Technol. Electron. Eng., 2012, 13(12): 937-943.

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http://www.zjujournals.com/xueshu/fitee/10.1631/jzus.C1200112     OR     http://www.zjujournals.com/xueshu/fitee/Y2012/V13/I12/937


A low drift current reference based on PMOS temperature correction technology

A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10?6/°C over the temperature range of ?40–120 °C under the typical condition.

关键词: Current reference,  Cross structure,  PMOS cascode,  Temperature coefficient,  Low drift 
[1] Zhi-hua Ning, Le-nian He. A low drift curvature-compensated bandgap reference with trimming resistive circuit[J]. Front. Inform. Technol. Electron. Eng., 2011, 12(8): 698-706.