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Front. Inform. Technol. Electron. Eng.  2013, Vol. 14 Issue (4): 235-243    DOI: 10.1631/jzus.C12MNT01
    
Electrical characterization of integrated passive devices using thin film technology for 3D integration
Xin Sun, Yun-hui Zhu, Zhen-hua Liu, Qing-hu Cui, Sheng-lin Ma, Jing Chen, Min Miao, Yu-feng Jin
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, Beijing 100871, China; Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005, China; Information Microsystem Institute, Beijing Information Science and Technology University, Beijing 100085, China
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Abstract  With the development of 3D integration technology, microsystems with vertical interconnects are attracting attention from researchers and industry applications. Basic elements of integrated passive devices (IPDs), including inductors, capacitors, and resistors, could dramatically save the footprint of the system, optimize the form factor, and improve the performance of radio frequency (RF) systems. In this paper, IPDs using thin film built-up technology are introduced, and the design and characterization of coplanar waveguides (CPWs), inductors, and capacitors are presented.

Key words： Integrated passive device (IPD)      Benzocyclobutene (BCB)      Thin flim      3D Integration     
Received: 18 October 2012      Published: 03 April 2013
CLC:  TN405  
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Xin Sun
Yun-hui Zhu
Zhen-hua Liu
Qing-hu Cui
Sheng-lin Ma
Jing Chen
Min Miao
Yu-feng Jin
Cite this article:

Xin Sun, Yun-hui Zhu, Zhen-hua Liu, Qing-hu Cui, Sheng-lin Ma, Jing Chen, Min Miao, Yu-feng Jin. Electrical characterization of integrated passive devices using thin film technology for 3D integration. Front. Inform. Technol. Electron. Eng., 2013, 14(4): 235-243.

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http://www.zjujournals.com/xueshu/fitee/10.1631/jzus.C12MNT01     OR     http://www.zjujournals.com/xueshu/fitee/Y2013/V14/I4/235


Electrical characterization of integrated passive devices using thin film technology for 3D integration

With the development of 3D integration technology, microsystems with vertical interconnects are attracting attention from researchers and industry applications. Basic elements of integrated passive devices (IPDs), including inductors, capacitors, and resistors, could dramatically save the footprint of the system, optimize the form factor, and improve the performance of radio frequency (RF) systems. In this paper, IPDs using thin film built-up technology are introduced, and the design and characterization of coplanar waveguides (CPWs), inductors, and capacitors are presented.

关键词： Integrated passive device (IPD),  Benzocyclobutene (BCB),  Thin flim,  3D Integration 
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