Please wait a minute...
Front. Inform. Technol. Electron. Eng.  2011, Vol. 12 Issue (4): 317-322    DOI: 10.1631/jzus.C1000178
    
GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications
Xiao-ying Wang, Wen-ting Guo, Yang-yang Peng, Wen-quan Sui*
Zhejiang California International Nanosystems Institute (ZCNI), Zhejiang University, Hangzhou 310029, China
Download:   PDF(303KB)
Export: BibTeX | EndNote (RIS)      

Abstract  A multi-band/multi-mode single-pole nine-throw (SP9T) switch for GSM/UMTS (global system for mobile communications/universal mobile telecommunication system) systems is demonstrated. The switch consists of a GaAs 0.5 μm pseudomorphic high-electron mobility transistor (pHEMT) radio frequency (RF) switches module and Si complementary metal–oxide–semiconductor (COMS) digital module with an encoder and a DC boost circuit. High isolation and high linearity are achieved by a series-shunt switch structure and the DC boost circuit, respectively. The switch shows a measured insertion loss of 0.4 dB at 0.8 GHz for GSM transmit arms, 0.7 dB at 0.9 GHz and 0.9 dB at 1.8 GHz for GSM receive arms, and 0.6 dB at 1.8 GHz for UMTS arms. The switch introduces 2nd and 3rd harmonic suppression levels less than ?64 dBc at 37 dBm input power. Isolations between transmit and receive terminals are more than 48 dB when one transmit arm is activated. The size of the RF switches module is 1.5 mm×1.1 mm, and the size of the digital module is 1.3 mm×0.63 mm with gold bonding wires connecting these two modules.

Key wordsGSM      UMTS      Single-pole nine-throw (SP9T)      pHEMT      Encoder      DC boost     
Received: 31 May 2010      Published: 11 April 2011
CLC:  TN432  
Cite this article:

Xiao-ying Wang, Wen-ting Guo, Yang-yang Peng, Wen-quan Sui. GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications. Front. Inform. Technol. Electron. Eng., 2011, 12(4): 317-322.

URL:

http://www.zjujournals.com/xueshu/fitee/10.1631/jzus.C1000178     OR     http://www.zjujournals.com/xueshu/fitee/Y2011/V12/I4/317


GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications

A multi-band/multi-mode single-pole nine-throw (SP9T) switch for GSM/UMTS (global system for mobile communications/universal mobile telecommunication system) systems is demonstrated. The switch consists of a GaAs 0.5 μm pseudomorphic high-electron mobility transistor (pHEMT) radio frequency (RF) switches module and Si complementary metal–oxide–semiconductor (COMS) digital module with an encoder and a DC boost circuit. High isolation and high linearity are achieved by a series-shunt switch structure and the DC boost circuit, respectively. The switch shows a measured insertion loss of 0.4 dB at 0.8 GHz for GSM transmit arms, 0.7 dB at 0.9 GHz and 0.9 dB at 1.8 GHz for GSM receive arms, and 0.6 dB at 1.8 GHz for UMTS arms. The switch introduces 2nd and 3rd harmonic suppression levels less than ?64 dBc at 37 dBm input power. Isolations between transmit and receive terminals are more than 48 dB when one transmit arm is activated. The size of the RF switches module is 1.5 mm×1.1 mm, and the size of the digital module is 1.3 mm×0.63 mm with gold bonding wires connecting these two modules.

关键词: GSM,  UMTS,  Single-pole nine-throw (SP9T),  pHEMT,  Encoder,  DC boost 
[1] Zong-feng QI, Qiao-qiao LIU, Jun WANG, Jian-xun LI. Battle damage assessment based on an improved Kullback-Leibler divergence sparse autoencoder[J]. Front. Inform. Technol. Electron. Eng., 2017, 18(12): 1991-2000.
[2] Liang Wei, Dan-dan Ding, Juan Du, Bin-bin Yu, Lu Yu. An efficient hardware design for HDTV H.264/AVC encoder[J]. Front. Inform. Technol. Electron. Eng., 2011, 12(6): 499-506.
[3] Chung-Fu Lu, Tzong-Chen Wu, Chien-Lung Hsu. A three-level authenticated conference key establishment protocol for UMTS networks[J]. Front. Inform. Technol. Electron. Eng., 2011, 12(5): 371-378.