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Front. Inform. Technol. Electron. Eng.  2012, Vol. 13 Issue (10): 793-798    DOI: 10.1631/jzus.C1200013
    
Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology
Neda Kazemy Najafabadi, Sare Nemati, Massoud Dousti
Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran; Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology
Neda Kazemy Najafabadi, Sare Nemati, Massoud Dousti
Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran; Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
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摘要: We propose a feedback type oscillator and two negative resistance oscillators. These microwave oscillators have been designed in the S band frequency. A relatively symmetric resonator is used in the feedback type oscillator. The first negative resistance oscillator uses a simple lumped element resonator which is substituted by a microstrip resonator in the second oscillator to improve results. The negative resistance oscillator produces 4.207 dBm and 7.124 dBm output power with the lumped element resonator and microstrip resonator respectively, and the feedback type oscillator produces ?10.707 dBm output power. The feedback type oscillator operates at 3 GHz with phase noise levels at ?83.30 dBc/Hz and ?103.3 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively. The phase noise levels of the negative resistance oscillator with the lumped element resonator are ?94.64 dBc/Hz and ?116 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively, at an oscillation frequency of 3.053 GHz. With the microstrip resonator the phase noise levels are ?99.49 dBc/Hz and ?119.641 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively, at an oscillation frequency of 3.072 GHz. The results showed that both the output power and the phase noise of the negative resistance oscillators were better than those of the feedback type oscillator.
关键词: Microwave oscillatorFeedback typeNegative resistanceResonatorAdvanced design system software    
Abstract: We propose a feedback type oscillator and two negative resistance oscillators. These microwave oscillators have been designed in the S band frequency. A relatively symmetric resonator is used in the feedback type oscillator. The first negative resistance oscillator uses a simple lumped element resonator which is substituted by a microstrip resonator in the second oscillator to improve results. The negative resistance oscillator produces 4.207 dBm and 7.124 dBm output power with the lumped element resonator and microstrip resonator respectively, and the feedback type oscillator produces ?10.707 dBm output power. The feedback type oscillator operates at 3 GHz with phase noise levels at ?83.30 dBc/Hz and ?103.3 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively. The phase noise levels of the negative resistance oscillator with the lumped element resonator are ?94.64 dBc/Hz and ?116 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively, at an oscillation frequency of 3.053 GHz. With the microstrip resonator the phase noise levels are ?99.49 dBc/Hz and ?119.641 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively, at an oscillation frequency of 3.072 GHz. The results showed that both the output power and the phase noise of the negative resistance oscillators were better than those of the feedback type oscillator.
Key words: Microwave oscillator    Feedback type    Negative resistance    Resonator    Advanced design system software
收稿日期: 2012-01-16 出版日期: 2012-10-01
CLC:  TN752.5  
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Neda Kazemy Najafabadi
Sare Nemati
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Neda Kazemy Najafabadi, Sare Nemati, Massoud Dousti. Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology. Front. Inform. Technol. Electron. Eng., 2012, 13(10): 793-798.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C1200013        http://www.zjujournals.com/xueshu/fitee/CN/Y2012/V13/I10/793

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