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Front. Inform. Technol. Electron. Eng.  2013, Vol. 14 Issue (4): 279-282    DOI: 10.1631/jzus.C12MNT07
    
High Q, high frequency, high overtone bulk acoustic resonator with ZnO films
Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang
State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
High Q, high frequency, high overtone bulk acoustic resonator with ZnO films
Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang
State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
 全文: PDF 
摘要： Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor (Q) at GHz. This paper describes a high overtone bulk acoustic resonator (HBAR) based on Al/ZnO/Al sandwich layers and c-axis sapphire substrate. ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high Q at the multiple resonances from a 0.5–4.0 GHz wide band with a total size (including the contact pads) of 0.6 mm×0.3 mm×0.4 mm. The device exhibits the best acoustic coupling at around 2.4 GHz, which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates Q values of 30 000, 25 000, and 6500 at 1.49, 2.43, and 3.40 GHz, respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.
关键词： Bulk acoustic wave resonator;  Quality factor (Q);  ZnO film;  Mason’s model    
Abstract: Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor (Q) at GHz. This paper describes a high overtone bulk acoustic resonator (HBAR) based on Al/ZnO/Al sandwich layers and c-axis sapphire substrate. ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high Q at the multiple resonances from a 0.5–4.0 GHz wide band with a total size (including the contact pads) of 0.6 mm×0.3 mm×0.4 mm. The device exhibits the best acoustic coupling at around 2.4 GHz, which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates Q values of 30 000, 25 000, and 6500 at 1.49, 2.43, and 3.40 GHz, respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.
Key words: Bulk acoustic wave resonator    Quality factor (Q)    ZnO film    Mason’s model
收稿日期: 2012-09-27 出版日期: 2013-04-03
CLC:  TN751  
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Meng-wei Liu
Ming-bo Zhu
Jun-hong Li
Cheng-hao Wang

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Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang. High Q, high frequency, high overtone bulk acoustic resonator with ZnO films. Front. Inform. Technol. Electron. Eng., 2013, 14(4): 279-282.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C12MNT07    或    http://www.zjujournals.com/xueshu/fitee/CN/Y2013/V14/I4/279

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