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Front. Inform. Technol. Electron. Eng.  2011, Vol. 12 Issue (7): 608-613    DOI: 10.1631/jzus.C1010300
    
A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers
Zhen-hua Li, Bang-hong Guo, Zheng-jun Wei*, Song-hao Liu, Nan Cheng, Jin-dong Wang, Jian-jun Guo, Long Yan
Key Laboratory of Photonic Information Technology of Guangdong Higher Education Institutes, SIPSE & LQIT, South China Normal University, Guangzhou 510006, China
A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers
Zhen-hua Li, Bang-hong Guo, Zheng-jun Wei*, Song-hao Liu, Nan Cheng, Jin-dong Wang, Jian-jun Guo, Long Yan
Key Laboratory of Photonic Information Technology of Guangdong Higher Education Institutes, SIPSE & LQIT, South China Normal University, Guangzhou 510006, China
 全文: PDF(258 KB)  
摘要： The S parameter expression of high-frequency models of the high electron mobility transistors (HEMTs) with basic feedback structure, especially the transmission gain S21, is presented and analyzed. In addition, an improved feedback structure and its theory are proposed and demonstrated, in order to obtain a better gain-flatness through the mutual interaction between the series inductor and the parallel capacitor in the feedback loop. The optimization solution for the feedback amplifier can eliminate the negative impacts on transmission gain S21 caused by things such as resonance peaks. Furthermore, our theory covers the shortage of conventional feedback amplifiers, to some extent. A wideband low-noise amplifier (LNA) with the improved feedback technology is designed based on HEMT. The transmission gain is about 20 dB with the gain variation of 1.2 dB from 100 MHz to 6 GHz. The noise figure is lower than 2.8 dB in the whole band and the amplifier is unconditionally stable.
关键词： Low-noise amplifier (LNA);  Ultra-wideband;  HEMT;  Feedback;  Gain flatness    
Abstract: The S parameter expression of high-frequency models of the high electron mobility transistors (HEMTs) with basic feedback structure, especially the transmission gain S21, is presented and analyzed. In addition, an improved feedback structure and its theory are proposed and demonstrated, in order to obtain a better gain-flatness through the mutual interaction between the series inductor and the parallel capacitor in the feedback loop. The optimization solution for the feedback amplifier can eliminate the negative impacts on transmission gain S21 caused by things such as resonance peaks. Furthermore, our theory covers the shortage of conventional feedback amplifiers, to some extent. A wideband low-noise amplifier (LNA) with the improved feedback technology is designed based on HEMT. The transmission gain is about 20 dB with the gain variation of 1.2 dB from 100 MHz to 6 GHz. The noise figure is lower than 2.8 dB in the whole band and the amplifier is unconditionally stable.
Key words: Low-noise amplifier (LNA)    Ultra-wideband    HEMT    Feedback    Gain flatness
收稿日期: 2010-06-28 出版日期: 2011-07-04
CLC:  TN722.3  
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Zhen-hua Li
Bang-hong Guo
Zheng-jun Wei
Song-hao Liu
Nan Cheng
Jin-dong Wang
Jian-jun Guo
Long Yan

引用本文:

Zhen-hua Li, Bang-hong Guo, Zheng-jun Wei, Song-hao Liu, Nan Cheng, Jin-dong Wang, Jian-jun Guo, Long Yan. A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers. Front. Inform. Technol. Electron. Eng., 2011, 12(7): 608-613.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C1010300    或    http://www.zjujournals.com/xueshu/fitee/CN/Y2011/V12/I7/608

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