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Front. Inform. Technol. Electron. Eng.  2011, Vol. 12 Issue (7): 597-603    DOI: 10.1631/jzus.C1000312
    
Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias
Yong Ding, Xiao-hua Luo*, Xiao-lang Yan
Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China
Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias
Yong Ding, Xiao-hua Luo*, Xiao-lang Yan
Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China
 全文: PDF(211 KB)  
摘要： Low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias conditions. It was found that the fluctuations of the channel current were directly dependent upon the sidegating bias. As the sidegating bias decreased, the amplitudes of the oscillations would increase correspondingly. Furthermore, the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain voltage. Two mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.
关键词： Low-frequency noises (LFN);  Effective substrate resistivity;  Channel-substrate junction;  Sidegating bias    
Abstract: Low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias conditions. It was found that the fluctuations of the channel current were directly dependent upon the sidegating bias. As the sidegating bias decreased, the amplitudes of the oscillations would increase correspondingly. Furthermore, the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain voltage. Two mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.
Key words: Low-frequency noises (LFN)    Effective substrate resistivity    Channel-substrate junction    Sidegating bias
收稿日期: 2010-09-09 出版日期: 2011-07-04
CLC:  TN324  
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Yong Ding
Xiao-hua Luo
Xiao-lang Yan

引用本文:

Yong Ding, Xiao-hua Luo, Xiao-lang Yan. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias. Front. Inform. Technol. Electron. Eng., 2011, 12(7): 597-603.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C1000312    或    http://www.zjujournals.com/xueshu/fitee/CN/Y2011/V12/I7/597

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