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增强工艺偏差容忍度的带隙基准电压源设计 |
俞淼, 罗小华, 卢宇峰, 李益航 |
浙江大学 超大规模集成电路研究所, 浙江 杭州 310027 |
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Bandgap voltage reference design with enhanced tolerance of process variations |
YU Miao, LUO Xiaohua, LU Yufeng, LI Yihang |
Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China |
引用本文:
俞淼, 罗小华, 卢宇峰, 李益航. 增强工艺偏差容忍度的带隙基准电压源设计[J]. 浙江大学学报(理学版), 2016, 43(6): 689-695.
YU Miao, LUO Xiaohua, LU Yufeng, LI Yihang. Bandgap voltage reference design with enhanced tolerance of process variations. Journal of ZheJIang University(Science Edition), 2016, 43(6): 689-695.
链接本文:
https://www.zjujournals.com/sci/CN/10.3785/j.issn.1008-9497.2016.06.013
或
https://www.zjujournals.com/sci/CN/Y2016/V43/I6/689
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[1] IVANOV V, BREDERLOW R, GERBER J. An ultra low power bandgap operational at supply from 0.75 V[J]. Solid-State Circuits, 2012,47(7):1515-1523. [2] BANERJEE A, CHATTERJEE A. Signature driven hierarchical post-manufacture tuning of RF systems for performance and power[J]. IEEE Transactions on Very Large Scale Integration Systems, 2015,23(2):342-355. [3] RADFAR M, SINGH J. A yield improvement technique in severe process, voltage, and temperature variations and extreme voltage scaling[J]. Microelectronics Reliability, 2014, 54(12):2813-2823. [4] 刘博,张雷鸣,王金婵.基于D/A转换器的工艺波动表征方法的研究[J].微电子学与计算机,2015,3(3):117-121. LIU Bo, ZHANG Leiming, WANG Jinchan. Research on characterization methodology for process variation with D/A converters[J]. Microelectronics & Computer,2015,3(3):117-121. [5] 吕伟锋,孙玲玲.一个简单的65 nm MOSFET失配模型[J].计算机辅助设计与图形学学报,2011,23(7):1280-1284. LYU Weifeng, SUN Lingling. A simplified 65 nm MOSFET mismatch model[J]. Journal of Computer-Aided Design & Computer Graphics, 2011,23(7):1280-1284. [6] LAKSHMIKUMAR K R, HADAWAY R A, COPELAND M A. Characterization and modeling of mismatch in MOS transistors for precision analog design[J]. IEEE Journal of Solid-State Circuits, 1986,21(6):1057-1066. [7] PELGROM M. Matching properties of MOS transistors[J]. IEEE Journal of Solid-State Circuits,1989,305(3):1433-1439. [8] PAPATHANASIOU K. A designer's approach to device mismatch:Theory, modeling, simulation techniques, scripting, applications and examples[J]. Analog Integrated Circuits & Signal Processing, 2006,48(2):95-106. [9] WIDLAR R J. New developments in IC voltage regulators[J]. IEEE Journal of Solid-state Circuits,1971,6(1):2-7. [10] 代国定,徐洋,李卫敏,等.高性能分段温度曲率补偿基准电压源设计[J].浙江大学学报:工学版,2010(11):2142-2147. DAI Guoding, XU Yang, LI Weimin, et al. Design of high performance bandgap reference based on piecewise temperature curvature compensated technology[J]. Journal of Zhejiang University:Engineering Science,2010(11):2142-2147. [11] 汤华莲,庄奕琪,张丽,等.一种可校准的低温漂基准电流源[J].西安电子科技大学学报:自然科学版,2013,40(4):130-136. TANG Hualian, ZHUANG Yiqi, ZHANG Li, et al. Design of a trimmed current reference with a low temperature drift[J]. Journal of Xidian University:Natural Sciences,2013,40(4):130-136. [12] 张献中,张涛.一种三阶曲率补偿带隙基准电压源的设计[J].武汉科技大学学报,2015(1):67-71. ZHANG Xianzhong, ZHANG Tao. A bandgap voltage reference with third-order curvature compensation[J]. Journal of Wuhan University of Science and Technology,2015(1):67-71. [13] KINGET P R. Device mismatch and tradeoffs in the design of analog circuits[J]. IEEE Journal of Solid-State Circuits, 2005,40(6):1212-1224. [14] GUPTA V, RINCÓN-MORA G. Predicting and designing for the impact of process variations and mismatch on the trim range and yield of bandgap references[C]//Quality of Electronic Design, ISQED 2005. Sixth International Symposium on IEEE. San Jose:IEEE,2005:503-508. [15] LYU Weifeng, SUN Lingling. Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs[J]. Chinese Journal of Semiconductors,2011(8):46-50. |
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