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Front. Inform. Technol. Electron. Eng.  2013, Vol. 14 Issue (3): 205-213    DOI: 10.1631/jzus.C1200268
    
An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
Li-heng Lou, Ling-ling Sun, Jun Liu, Hai-jun Gao
Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China; MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou 310018, China
An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
Li-heng Lou, Ling-ling Sun, Jun Liu, Hai-jun Gao
Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China; MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou 310018, China
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摘要： This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors (MOSFETs) with optimized layout in the voltage controlled oscillator (VCO). The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity. The simulation convergence is greatly improved by this method. An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement. The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting. The model is verified with an LC VCO design, and exhibits excellent convergence during simulation. The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy, respectively, indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency (RF) circuit design.
关键词： Layout optimizing;  Modeling;  PSP;  Charge model;  Cross-coupled;  Metal-oxide-semiconductor (MOS);  Voltage controlled oscillator (VCO)    
Abstract: This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors (MOSFETs) with optimized layout in the voltage controlled oscillator (VCO). The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity. The simulation convergence is greatly improved by this method. An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement. The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting. The model is verified with an LC VCO design, and exhibits excellent convergence during simulation. The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy, respectively, indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency (RF) circuit design.
Key words: Layout optimizing    Modeling    PSP    Charge model    Cross-coupled    Metal-oxide-semiconductor (MOS)    Voltage controlled oscillator (VCO)
收稿日期: 2012-09-21 出版日期: 2013-03-05
CLC:  TN432  
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Li-heng Lou
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引用本文:

Li-heng Lou, Ling-ling Sun, Jun Liu, Hai-jun Gao. An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator. Front. Inform. Technol. Electron. Eng., 2013, 14(3): 205-213.

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http://www.zjujournals.com/xueshu/fitee/CN/10.1631/jzus.C1200268    或    http://www.zjujournals.com/xueshu/fitee/CN/Y2013/V14/I3/205

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