氧化铝增强的PdSe2/Si异质结光电探测器
Enhanced PdSe2/Si heterojunction photodetector by Al2O3 layer
氧化铝增强的PdSe2/Si异质结光电探测器 |
| 贺亦菲,杨德仁,皮孝东 |
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Enhanced PdSe2/Si heterojunction photodetector by Al2O3 layer |
| Yi-fei HE,De-ren YANG,Xiao-dong PI |
| 图 13 PdSe2/Al2O3/Si异质结器件在波长为375~1 342 nm的光照下的光响应特性 |
| Fig.13 Performance of PdSe2/Al2O3/Si heterojunction device under 375~1 342 nm illumination |
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